Secondary Ion Mass Spectrometry SIMS III

Proceedings of the Third International Conference, Technical University, Budapest, Hungary, August 30–September 5, 1981

  • A. Benninghoven
  • J. Giber
  • J. László
  • M. Riedel
  • H. W. Werner

Part of the Springer Series in Chemical Physics book series (CHEMICAL, volume 19)

Table of contents

  1. Front Matter
    Pages I-XI
  2. Instrumentation

    1. Front Matter
      Pages 1-1
    2. M. J. Higatsberger, P. Pollinger, H. Studnicka, F. G. Rüdenauer
      Pages 38-42
    3. F. G. Rüdenauer, P. Pollinger, H. Studnicka, H. Gnaser, W. Steiger, M. J. Higatsberger
      Pages 43-48
    4. V. T. Cherepin, I. N. Dubinsky, Ya. Ya. Dyad’kin
      Pages 49-51
    5. R.-L. Inglebert, J.-F. Hennequin
      Pages 57-60
    6. V. T. Cherepin, V. L. Ol’khovsky
      Pages 77-80
    7. W. Bedrich, B. Koch, H. Mai, U. Seidenkranz, H. Syhre, R. Voigtmann
      Pages 81-87
    8. H. Frenzel, J. L. Maul
      Pages 94-96
    9. K. H. Guenther, E. Hauser, G. Hobi, P. G. Wierer, E. Brandstaetter
      Pages 97-101
    10. F. Simondet, D. Kubicki
      Pages 102-104
  3. Fundamentals I. Ion Formation

    1. Front Matter
      Pages 105-105

About these proceedings

Introduction

Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be­ tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.

Keywords

Atom Diffusion Sorption adsorption catalyst crystal isotope mass spectrometry metals microscopy segregation semiconductor spectrometry spectroscopy structure

Editors and affiliations

  • A. Benninghoven
    • 1
  • J. Giber
    • 2
  • J. László
    • 2
  • M. Riedel
    • 3
  • H. W. Werner
    • 4
  1. 1.Physikalisches InstitutUniversität MünsterMünsterFed. Rep. of Germany
  2. 2.Physical Institute of the Technical UniversityBudapestHungary
  3. 3.Department of Physical Chemistry and RadiologyEötvös UniversityBudapestHungary
  4. 4.Philips Research LaboratoriesEindhovenThe Netherlands

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-88152-7
  • Copyright Information Springer-Verlag Berlin Heidelberg 1982
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-88154-1
  • Online ISBN 978-3-642-88152-7
  • Series Print ISSN 0172-6218
  • About this book