Amorphous and Crystalline Silicon Carbide IV

Proceedings of the 4th International Conference, Santa Clara, CA, October 9–11, 1991

  • Cary Y. Yang
  • M. Mahmudur Rahman
  • Gary L. Harris

Part of the Springer Proceedings in Physics book series (SPPHY, volume 71)

Table of contents

  1. Front Matter
    Pages I-XII
  2. Growth of Crystalline Silicon Carbide

    1. Front Matter
      Pages 1-1
    2. S. S. Iyer, K. Eberl, M. S. Goorsky, J. C. Tsang, F. K. LeGoues, F. Cardone et al.
      Pages 13-22
    3. T. Kimoto, H. Nishino, A. Yamashita, W. S. Yoo, H. Matsunami
      Pages 31-39
    4. L. B. Rowland, S. Tanaka, R. S. Kern, R. F. Davis
      Pages 84-89
    5. S. Hara, Y. Aoyagi, M. Kawai, S. Misawa, E. Sakuma, S. Yoshida
      Pages 90-95
    6. K. Koga, Y. Fujikawa, Y. Ueda, T. Yamaguchi
      Pages 96-100
    7. V. A. Dmitriev, L. B. Elfimov, I. Yu. Lin’kov, Ya. V. Morozenko, I. P. Nikitina, V. E. Chelnokov et al.
      Pages 101-104
    8. L. L. Clemen, W. J. Choyke, R. P. Devaty, J. A. Powell, H.-S. Kong
      Pages 105-115
    9. I. M. Baranov, V. A. Dmitriev, I. P. Nikitina, T. S. Kondrateva
      Pages 116-118
  3. Characterization of Crystalline Silicon Carbide

    1. Front Matter
      Pages 127-127
    2. W. Suttrop, G. Pensl, W. J. Choyke, A. Dörnen, S. Leibenzeder, R. Stein
      Pages 129-135

About these proceedings

Introduction

Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.

Keywords

SiGe band structure crystal development diodes electron electronic material hydrogen laser material optoelectronics semiconductor simulation thin films transistor

Editors and affiliations

  • Cary Y. Yang
    • 1
  • M. Mahmudur Rahman
    • 1
  • Gary L. Harris
    • 2
  1. 1.Microelectronics LaboratorySanta Clara UniversitySanta ClaraUSA
  2. 2.School of EngineeringHoward UniversityUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-84804-9
  • Copyright Information Springer-Verlag Berlin Heidelberg 1992
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-84806-3
  • Online ISBN 978-3-642-84804-9
  • Series Print ISSN 0930-8989
  • Series Online ISSN 1867-4941
  • About this book