Physics and Technology of Submicron Structures

1. From Two Dimensions to One: Conductance Phenomena and Optical Properties

   1. Visualization and Theoretical Modelling of the Atomistic Structure of Semiconductor Quantum Well Interfaces

      • J. Christen, D. Bimberg, T. Fukunaga, H. Nakashima, D. E. Mars, J. N. Miller

      Pages 176-186

   2. Quasi-One-Dimensional Electron Channels in AlGaAs/GaAs Heterojunctions

      • W. Hansen, J. P. Kotthaus

      Pages 187-197

   3. Quantum and Classical Ballistic Transport in Constricted Two-Dimensional Electron Gases

      • H. van Houten, B. J. van Wees, C. W. J. Beenakker

      Pages 198-207

   4. Transport Properties of Narrow, Variable Width Channels in the 2DEG of a GaAs:AlGaAs Heterojunction

      • T. J. Thornton, C. J. B. Ford, D. A. Wharam, R. Newbury, M. Pepper, H. Ahmed et al.

      Pages 208-217

   5. Hopping Transport in One-Dimensional Semiconductor Systems

      • P. N. Butcher, J. A. McInnes

      Pages 218-224

2. Submicron Devices: Physics and Applications

   1. Front Matter

      Pages 225-225

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   2. Transport Physics in Ultra-Submicron Devices

      • D. K. Ferry

      Pages 226-242

   3. Physics of One-Dimensional MOSFETs

      • A. Hartstein

      Pages 243-252

   4. MOSFETs Under Electrical Stress — Degradation, Subthreshold Conduction, and Noise in a Submicron Structure

      • F. Koch, M. Bollu, A. Asenov

      Pages 253-262

   5. Physics and Fabrication of Metal-Semiconductor Microstructures

      • E. Rosencher, P. A. Badoz

      Pages 263-277

   6. Resonant Tunneling Barrier Structures and Their Applications to the Resonant Tunneling Hot Electron Transistor

      • S. Hiyamizu, S. Muto, T. Inata, S. Sasa, T. Fujii, K. Imamura et al.

      Pages 278-286

3. Back Matter

   Pages 287-287

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This volume presents a discussion of the latest results in the physics of low-dimensional structures. At the winter school major breakthroughs were reported, and some of the excitement of the participants is reflected in the contributions. The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures.

• nanostructure
• optical properties
• semiconductor
• semiconductor device
• tunneling

• Institut für Experimentalphysik, Universität Linz, Linz, Austria

  Helmut Heinrich

• Institut für Physik, Montanuniversität Leoben, Leoben, Austria

  Günther Bauer

• Institut für Festkörperphysik, Universität Wien, Wien, Austria

  Friedemar Kuchar

Policies and ethics