Point Defects in Semiconductors I

Theoretical Aspects

  • Michel Lannoo
  • Jacques Bourgoin

Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 22)

Table of contents

  1. Front Matter
    Pages I-XVII
  2. Michel Lannoo, Jacques Bourgoin
    Pages 1-35
  3. Michel Lannoo, Jacques Bourgoin
    Pages 36-67
  4. Michel Lannoo, Jacques Bourgoin
    Pages 68-112
  5. Michel Lannoo, Jacques Bourgoin
    Pages 113-154
  6. Michel Lannoo, Jacques Bourgoin
    Pages 155-190
  7. Michel Lannoo, Jacques Bourgoin
    Pages 191-218
  8. Michel Lannoo, Jacques Bourgoin
    Pages 219-244
  9. Back Matter
    Pages 245-268

About this book


From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis­ location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de­ scription of bonding.


Gitterfehler Halbleiter band structure band theory crystal crystal structure crystallographic defect diffusion electron electron correlations long-range interaction molecule scattering semiconductor

Authors and affiliations

  • Michel Lannoo
    • 1
  • Jacques Bourgoin
    • 1
  1. 1.Laboratoire d’Etude des Surfaces et Interfaces, Physique des SolidesInstitut Superieur d’Electronique du NordLille CédexFrance

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 1981
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-81576-8
  • Online ISBN 978-3-642-81574-4
  • Series Print ISSN 0171-1873
  • Buy this book on publisher's site