Silicon-Based Millimeter-Wave Devices

  • Johann-Friedrich Luy
  • Peter Russer

Part of the Springer Series in Electronics and Photonics book series (SSEP, volume 32)

Table of contents

  1. Front Matter
    Pages I-XVI
  2. P. Russer, E. Biebl
    Pages 1-46
  3. J.-F. Luy
    Pages 47-88
  4. Jürgen H. Werner, Uwe Rau
    Pages 89-148
  5. A. Gruhle
    Pages 149-192
  6. M. Claassen
    Pages 215-239
  7. M. Willander, Y. Fu, Q. Chen
    Pages 285-322
  8. W. Menzel
    Pages 323-338
  9. Back Matter
    Pages 339-343

About this book


Silicon-Based Millimeter-Wave Devices describes field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium devices: physics and RF properties of the heterobipolar transistor and quantum effect devices such as the resonant tunneling element are described. The integration of devices in monolithic circuits is explained and advanced technologies are presented along with the self-mixing oscillator operation. Finally sensor and system applications are considered.


Planar Sensor antenna bridge circuit communication crystal diodes information material simulation switch transistor transmission tunneling

Editors and affiliations

  • Johann-Friedrich Luy
    • 1
  • Peter Russer
    • 2
  1. 1.Forschung und TechnikDaimler-Benz AGUlmGermany
  2. 2.Ferdinand-Braun-Institut für HöchstfrequenztechnikBerlinGermany

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 1994
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-79033-1
  • Online ISBN 978-3-642-79031-7
  • Series Print ISSN 0172-5734
  • Buy this book on publisher's site