Amorphous and Crystalline Silicon Carbide II

Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15—16, 1988

  • Mahmud M. Rahman
  • Cary Y.-W. Yang
  • Gary L. Harris
Conference proceedings

Part of the Springer Proceedings in Physics book series (SPPHY, volume 43)

Table of contents

  1. Front Matter
    Pages I-X
  2. Growth of Crystalline Silicon Carbide

    1. Front Matter
      Pages 1-1
    2. J. A. Powell, L. G. Matus
      Pages 14-19
    3. J. C. Liao, J. L. Crowley, P. H. Klein
      Pages 20-25
    4. T. Nakata, K. Koga, Y. Matsushita, Y. Ueda, T. Niina
      Pages 26-34
    5. W. S. Yoo, S. Nishino, H. Matsunami
      Pages 35-39
    6. M. G. Spencer, G. L. Harris, S. L. Richardson, M. F. Mahmood, A. M. Jones
      Pages 40-41
  3. Growth of Amorphous, Microcrystalline, and Polycrystalline Silicon Carbide

    1. Front Matter
      Pages 43-43
    2. M. Nishikuni, H. Dohjoh, K. Ninomiya, N. Nakamura, T. Matsuoka, S. Tsuda et al.
      Pages 54-59
    3. J. Pankove, V. Hornback, S. Sritharan, J. Wilson, S. Asher, R. Dhere et al.
      Pages 60-65
    4. C.-J. Chu, G. D. Soraru, F. Babonneau, J. D. Mackenzie
      Pages 66-71
  4. Characterization of Silicon Carbide

    1. Front Matter
      Pages 73-73
    2. S. Akita, Y. Nakayama, T. Kawamura
      Pages 74-79
    3. A. S. Byrne, M. Ju, T. Asano, M. M. Rahman, C. Y. Yang
      Pages 80-84
    4. D. L. Williamson, A. H. Mahan, B. P. Nelson, R. S. Crandall
      Pages 89-93
    5. I. Nashiyama, H. Okumura, E. Sakuma, S. Misawa, K. Endo, S. Yoshida et al.
      Pages 100-105
    6. J. A. Freitas Jr., S. G. Bishop, P. B. Klein, P. E. R. Nordquist Jr., M. L. Gipe
      Pages 106-111
    7. S. G. Bishop, J. A. Freitas Jr., P. E. R. Nordquist Jr., M. L. Gipe
      Pages 112-117
    8. J. Yang, P. Pirouz, J. A. Powell
      Pages 118-118
    9. P. E. R. Nordquist Jr., H. Lessoff, R. J. Gorman, M. L. Gipe
      Pages 119-124
    10. S. A. Alterovitz, N. S. Shoemaker, J. A. Powell
      Pages 125-125
    11. W. J. Choyke, J. A. Powell, T. T. Cheng, P. Pirouz
      Pages 126-126
    12. G. A. Hanidu, P. K. Banerjee, J. S. Kim, S. S. Mitra
      Pages 127-127
  5. Growth and Applications of Diamond Thin Films

    1. Front Matter
      Pages 129-129
    2. M. N. Yoder
      Pages 130-134
    3. K. Shenai, R. S. Scott, B. J. Baliga
      Pages 135-142
    4. K. V. Ravi, M. Landstrass, J. Herb
      Pages 143-143
  6. Surfaces and Interfaces of Silicon Carbide

    1. Front Matter
      Pages 145-145
    2. M. Iwami, M. Hirai, M. Kusaka, H. Nakamura, T. Koshikawa, K. Shibahara et al.
      Pages 146-151
    3. T. Asano, D. Sugiarto, K. Tran, M. M. Rahman, C. Y. Yang, F. A. Ponce
      Pages 153-156
    4. H. Matsunami, M. Nakayama, T. Yoshinobu, H. Shiomi, T. Fuyuki
      Pages 157-161
  7. Processing and Device Applications of Silicon Carbide

    1. Front Matter
      Pages 163-163
    2. J. D. Parsons, G. B. Kruaval, J. A. Vigil
      Pages 171-177
    3. H. Fuma, A. Miura, H. Tadano, S. Sugiyama, M. Takigawa
      Pages 178-183
    4. G. Kelner, M. Shur, S. Binari, K. Sleger, H. Kong
      Pages 184-190
    5. R. J. Soukup, J. R. Sullivan
      Pages 191-197
    6. Y. Chinone, S. Ezaki, F. Fujita, K. Matsumoto
      Pages 198-206
    7. Y. Onuma, S. Miyashita, Y. Nishibe, K. Kamimura, K. Tezuka
      Pages 212-216

About these proceedings


This volume contains written versions of the papers presented at the Second Inter­ national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem­ ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in­ ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.


X-ray crystal electron electron microscopy electron spectroscopy fluid mechanics hydrogen kinetics laser microscopy photoelectron spectroscopy scattering spectroscopy thin films transmission electron microscopy

Editors and affiliations

  • Mahmud M. Rahman
    • 1
  • Cary Y.-W. Yang
    • 1
  • Gary L. Harris
    • 2
  1. 1.Microelectronics LaboratorySanta Clara UniversitySanta ClaraUSA
  2. 2.Materials Science Research Center of ExcellenceHoward UniversityUSA

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag Berlin Heidelberg 1989
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-75050-2
  • Online ISBN 978-3-642-75048-9
  • Series Print ISSN 0930-8989
  • Series Online ISSN 1867-4941
  • Buy this book on publisher's site