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Picosecond Electronics and Optoelectronics

Proceedings of the Topical Meeting Lake Tahoe, Nevada, March 13–15, 1985

  • Gerard Albert Mourou
  • David M. Bloom
  • Chi-H. Lee

Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Table of contents

  1. Front Matter
    Pages I-X
  2. Ultrafast Optics and Electronics

    1. Front Matter
      Pages 1-1
    2. D. H. Auston, K. P. Cheung, J. A. Valdmanis, P. R. Smith
      Pages 2-8
    3. Naresh Chand, Hadis Morkoç
      Pages 9-17
    4. R. A. Murphy
      Pages 38-45
    5. B. H. Kolner, K. J. Weingarten, M. J. W. Rodwell, D. M. Bloom
      Pages 50-53
    6. K. E. Meyer, D. R. Dykaar, G. A. Mourou
      Pages 54-57
    7. S. Williamson, G. A. Mourou
      Pages 58-61
    8. Donald E. Cooper, Steven C. Moss
      Pages 62-65
    9. W. R. Eisenstadt, R. B. Hammond, D. R. Bowman, R. W. Dutton
      Pages 66-69
  3. High-Speed Phenomena in Bulk Semiconductors

  4. Quantum Structures and Applications

    1. Front Matter
      Pages 101-101
    2. R. D. Burnhan, W. Streifer, T. L. Paoli, R. L. Thornton, D. L. Smith
      Pages 102-104
    3. J. A. Kash, E. E. Mendez, H. Morkoç
      Pages 131-133
    4. M. A. Reed, R. T. Bate, W. M. Duncan, W. R. Frensley, H. D. Shih
      Pages 134-137
    5. J. Ho, R. O. Grondin
      Pages 139-142
    6. N. Peyghambarian, H. M. Gibbs, J. L. Jewell, A. Migus, A. Antonetti, D. Hulin et al.
      Pages 148-150
    7. D. Hulin, A. Migus, A. Antonetti, A. Mysyrowicz, H. M. Gibbs, N. Peyghambarian et al.
      Pages 151-154
  5. Picosecond Diode Lasers

    1. Front Matter
      Pages 155-155
    2. G. Eisenstein, S. K. Korotky, R. S. Tucker, U. Koren, R. M. Jopson, L. W. Stulz et al.
      Pages 156-158
    3. Y. Silberberg, P. W. Smith, D. A. B. Miller, B. Tell, A. C. Gossard, W. Wiegmann
      Pages 159-162
    4. D. Haas, J. McLean, J. Wurl, T. K. Gustafson, C. L. Tang
      Pages 167-170
  6. Optoelectronics and Photoconductive Switching

    1. Front Matter
      Pages 171-171
    2. Masayuki Izutsu, Hiroshi Haga, Tadasi Sueta
      Pages 172-175
    3. L. M. Walpita, W. S. C. Chang, H. H. Wieder, T. E. Van Eck
      Pages 176-179
    4. J. E. Bowers, C. A. Burrus, R. S. Tucker
      Pages 180-183
    5. A. G. Kostenbauder, A. E. Siegman
      Pages 184-187
    6. A. M. Johnson, D. W. Kisker, W. M. Simpson, R. D. Feldman
      Pages 188-192
    7. S. R. J. Brueck, V. Diadiuk, T. Jones, W. Lenth
      Pages 193-196
    8. Ghavam G. Shahidi, Erich P. Ippen, John Melngailis
      Pages 197-200
    9. P. M. Downey, J. R. Karin
      Pages 201-204
    10. Robert A. Lawton
      Pages 205-206
    11. Chi H. Lee, Aileen M. Yurek, M. G. Li, E. A. Chauchard, R. P. Fischer
      Pages 212-215
    12. Ming G. Li, Chi H. Lee, A. Caroglanian, E. A. Greene, C. Y. She, P. Polak-Dingels et al.
      Pages 216-219

About these proceedings

Introduction

Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro­ gress of the different techni ques of heteroepitaxy. The di scovery of two­ dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res­ pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.

Keywords

Transmission development electro-optic effect electronics laser optical devices optics semiconductor semiconductor devices transistor

Editors and affiliations

  • Gerard Albert Mourou
    • 1
  • David M. Bloom
    • 2
  • Chi-H. Lee
    • 3
  1. 1.Department of PhysicsThe University of RochesterRochesterUSA
  2. 2.Edward L. Ginzton LaboratoryStanford UniversityStanfordUSA
  3. 3.Department of Electrical EngineeringUniversity of MarylandCollege ParkUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-70780-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 1985
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-70782-7
  • Online ISBN 978-3-642-70780-3
  • Series Print ISSN 0172-5734
  • Buy this book on publisher's site