Optical Properties of III–V Semiconductors

The Influence of Multi-Valley Band Structures

  • Heinz Kalt
Part of the Springer Series in Solid-State Sciences book series (SSSOL, volume 120)

Table of contents

  1. Front Matter
    Pages I-XII
  2. Heinz Kalt
    Pages 125-172
  3. Heinz Kalt
    Pages 173-177
  4. Back Matter
    Pages 179-201

About this book

Introduction

Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on performance features in opto-electronic devices. The optical response of such materials with multi-valley band structures is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole droplet formation, etc. The discussion is self-consistent with the dynamics of excitons and carriers from intervalley compiling.

Keywords

electronic properties exciton optical properties semiconductor spectroscopy

Authors and affiliations

  • Heinz Kalt
    • 1
  1. 1.Institut für Angewandte PhysikUniversität KarlsruheKarlsruheGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-58284-4
  • Copyright Information Springer-Verlag Berlin Heidelberg 1996
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-63527-4
  • Online ISBN 978-3-642-58284-4
  • Series Print ISSN 0171-1873
  • About this book