Epitaxy of Semiconductors

Introduction to Physical Principles

  • Udo W.┬áPohl

Part of the Graduate Texts in Physics book series (GTP)

Table of contents

  1. Front Matter
    Pages I-XIV
  2. Udo W. Pohl
    Pages 1-9
  3. Udo W. Pohl
    Pages 131-170
  4. Udo W. Pohl
    Pages 225-273
  5. Udo W. Pohl
    Pages 275-313
  6. Back Matter
    Pages 315-325

About this book


Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.


Crystal Structures Epitaxy of Semiconductors Liquid Phase Epitaxy Materials for Optoelectronics Metallorganic Vapor Phase Epitaxy Molecular Beam Epitaxy Semiconductor Heterostructures Semiconductor Nanostructures Thermodynamics of Epitaxial Layer Growth

Authors and affiliations

  • Udo W.┬áPohl
    • 1
  1. 1.TU BerlinBerlinGermany

Bibliographic information