Effective Electron Mass in Low-Dimensional Semiconductors

  • Sitangshu Bhattacharya
  • Kamakhya Prasad Ghatak
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 167)

Table of contents

  1. Front Matter
    Pages i-xxiii
  2. Influence of Quantum Confinement on the Effective Electron Mass (EEM) in Non-Parabolic Semiconductors

    1. Front Matter
      Pages 1-1
  3. INFLUENCE OF QUANTUM CONFINEMENT ON THE EFFECTIVE ELECTRON MASS (EEM) IN NON-PARABOLIC SEMICONDUCTORS

    1. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 3-72
    2. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 73-95
    3. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 97-124
    4. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 125-174
    5. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 175-224
  4. Influence of Light Waves on the EEM in Optoelectronic Semiconductors

    1. Front Matter
      Pages 225-225
  5. INFLUENCE OF LIGHT WAVES ON THE EEM IN OPTOELECTRONIC SEMICONDUCTORS

    1. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 227-315
  6. Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors

    1. Front Matter
      Pages 317-317
  7. INFLUENCE OF INTENSE ELECTRIC FIELD ON THE EEM IN OPTOELECTRONIC SEMICONDUCTORS

    1. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 319-363
    2. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 365-426
    3. Sitangshu Bhattacharya, Kamakhya Prasad Ghatak
      Pages 427-431
  8. Back Matter
    Pages 433-535

About this book

Introduction

This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.

Keywords

EEM book EEM review effective electron mass, EEM low dimensional semiconductors non-parabolic Semiconductors optoelectronic Semiconductors quantized optoelectronic semiconductors quantum confined materials quantum wells, wires, superlattices quantum wires

Authors and affiliations

  • Sitangshu Bhattacharya
    • 1
  • Kamakhya Prasad Ghatak
    • 2
  1. 1.Ctr. Electronics Design & Technology, Nano Scale Device Research Lab.Indian Institute of ScienceBangaloreIndia
  2. 2.Department of Electronics and CommunicatNational Institute of TechnologyAgartala, TripuraIndia

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-31248-9
  • Copyright Information Springer-Verlag Berlin Heidelberg 2013
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-642-31247-2
  • Online ISBN 978-3-642-31248-9
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book