Table of contents
Fowler–Nordheim Field Emission from Quantum Wires and Superlattices of Nonparabolic Semiconductors
Fowler–Nordheim Field Emission from Quantum-Confined III–V Semiconductors in the Presence of Light Waves
Fowler–Nordheim Field Emission from Quantum-Confined Optoelectronic Semiconductors in the Presence of Intense Electric Field
About this book
This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids.
FNFE in optoelectronic materials Fowler-Nordheim field emission nanostructured materials quantized optoelectronic materials quantum confined materials quantum confined systems quantum wells, dots and wires strong magnetic field superlattices thermoelectric power