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Silicon Carbide

Recent Major Advances

  • W. J. Choyke
  • H. Matsunami
  • G. Pensl

Part of the Advanced Texts in Physics book series (ADTP)

Table of contents

  1. Front Matter
    Pages I-XXXIV
  2. Theory

    1. Front Matter
      Pages 1-1
    2. F. Bechstedt, J. Furthmüller, U. Grossner, C. Raffy
      Pages 3-25
    3. M. Bockstedte, A. Mattausch, O. Pankratov
      Pages 27-55
    4. P. Deák, A. Gali, B. Aradi
      Pages 57-88
  3. Crystal Growth

    1. Front Matter
      Pages 119-119
    2. N. Ohtani, M. Katsuno, T. Fujimoto, H. Yashiro
      Pages 137-162
    3. H.-J. Rost, D. Schulz, D. Siche
      Pages 163-178
    4. P. G. Neudeck, J. A. Powell
      Pages 179-205
    5. H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, G. Pensl, W. J. Choyke et al.
      Pages 207-228
    6. J. K. N. Lindner
      Pages 251-277
  4. Surface and Interface Properties

  5. Characterization

    1. Front Matter
      Pages 411-411
    2. W. J. Choyke, R. P. Devaty
      Pages 413-435
    3. N. T. Son, C. Persson, U. Lindefelt, W. M. Chen, B. K. Meyer, D. M. Hofmann et al.
      Pages 437-460
    4. N. T. Son, Mt. Wagner, C. G. Hemmingsson, L. Storasta, B. Magnusson, W. M. Chen et al.
      Pages 461-492
    5. M. Laube, F. Schmid, K. Semmelroth, G. Pensl, R. P. Devaty, W. J. Choyke et al.
      Pages 493-515
    6. F. Schmid, M. Krieger, M. Laube, G. Pensl, G. Wagner
      Pages 517-536
    7. N. Achtziger, W. Witthuhn
      Pages 537-561
    8. A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, G. Kögel et al.
      Pages 563-584
  6. Processing

    1. Front Matter
      Pages 649-649
    2. S. Tanimoto, H. Okushi, K. Arai
      Pages 651-669
    3. C. A. Zorman, M. Mehregany
      Pages 671-698
    4. S. Monnoye, D. Turover, P. Vicente
      Pages 699-710
    5. T. Kimoto, H. Yano, Y. Negoro, K. Hashimoto, H. Matsunami
      Pages 711-733
  7. Devices

    1. Front Matter
      Pages 735-735
    2. T. P. Chow, N. Ramungul, J. Fedison, Y. Tang
      Pages 737-767
    3. Y. Sugawara
      Pages 769-783
    4. A. Agarwal, S.-H. Ryu, J. Palmour
      Pages 785-811
    5. E. Morvan, A. Kerlain, C. Dua, C. Brylinski
      Pages 839-868
    6. A. L. Spetz, S. Savage
      Pages 869-896
  8. Back Matter
    Pages 897-899

About this book

Introduction

Since the 1997 publication of Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

Keywords

Crystal growth Helium-Atom-Streuung PES Silicon carbide Transmission crystal diffraction electron microscopy microscopy semiconductor spectroscopy thin film thin films transmission electron microscopy

Editors and affiliations

  • W. J. Choyke
    • 1
  • H. Matsunami
    • 2
  • G. Pensl
    • 3
  1. 1.Department of Physics and AstronomyUniversity of PittsburghPittsburghUSA
  2. 2.Department of Electronic Science and Engineering YoshidahonmachiKyoto UniversitySakyo, KyotoJapan
  3. 3.Institute of Applied PhysicsUniversity of Erlangen-NürnbergErlangenGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-18870-1
  • Copyright Information Springer-Verlag Berlin Heidelberg 2004
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-62333-2
  • Online ISBN 978-3-642-18870-1
  • Series Print ISSN 1439-2674
  • Buy this book on publisher's site