Einstein Relation in Compound Semiconductors and their Nanostructures

  • Kamakhya Prasad Ghatak
  • Sitangshu Bhattacharya
  • Debashis De
Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 116)

About this book

Introduction

This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems.

Keywords

Compound semiconductors Einstein relation Nanotube Quantum wells Quantum wires Superlattices carbon nanotubes

Authors and affiliations

  • Kamakhya Prasad Ghatak
    • 1
  • Sitangshu Bhattacharya
    • 2
  • Debashis De
    • 3
  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia
  2. 2.Nanoscale Device Research Laboratory Center for Electronics Design TechnologyIndian Institute of ScienceBangaloreIndia
  3. 3.Department of Computer Sciences and EngineeringWest Bengal University of TechnologyKolkataIndia

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-540-79557-5
  • Copyright Information Springer Berlin Heidelberg 2009
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-540-79556-8
  • Online ISBN 978-3-540-79557-5
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812