Ion Implantation and Synthesis of Materials

  • Michael Nastasi
  • James W. Mayer

About this book

Introduction

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Keywords

Diffusion Doping Implanted shallow junctions Ion implantation Ion ranges Ion-modified materials Slicing silicon crystal distribution materials properties materials science

Authors and affiliations

  • Michael Nastasi
    • 1
  • James W. Mayer
    • 2
  1. 1.Laboratory Fellow and Team Leader Ion-Solid Interaction and Interface Engineering TeamLos Alamos National LaboratoryNM 87545USA
  2. 2.Center for Solid State ScienceArizona State UniversityTempeUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-540-45298-0
  • Copyright Information Springer-Verlag Berlin Heidelberg 2006
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-540-23674-0
  • Online ISBN 978-3-540-45298-0
  • About this book