Physics of Ferroelectrics

A Modern Perspective

  • Karin M. Rabe
  • Charles H. Ahn
  • Jean-Marc Triscone
Part of the Topics in Applied Physics book series (TAP, volume 105)

Table of contents

  1. Front Matter
    Pages I-XII
  2. Karin M. Rabe, Matthew Dawber, Céline Lichtensteiger, Charles H. Ahn, Jean-Marc Triscone
    Pages 1-30
  3. Raffaele Resta, David Vanderbilt
    Pages 31-68
  4. Premi Chandra, Peter B. Littlewood
    Pages 69-116
  5. Karin M. Rabe, Philippe Ghosez
    Pages 117-174
  6. Agham-Bayan Posadas, Mikk Lippmaa, Fred J. Walker, Matthew Dawber, Charles H. Ahn, Jean-Marc Triscone
    Pages 219-304
  7. Céline Lichtensteiger, Matthew Dawber, Jean-Marc Triscone
    Pages 305-338
  8. Patrycja Paruch, Thierry Giamarchi, Jean-Marc Triscone
    Pages 339-362
  9. Long-Qing Chen
    Pages 363-372
  10. Céline Lichtensteiger, Matthew Dawber
    Pages 373-384
  11. Back Matter
    Pages 385-389

About this book

Introduction

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.

Keywords

Epitaxial Ferroelectric Thin Films Helium-Atom-Streuung Semiconductor Size Effects electricity ferroelectrics first principles calculations growth methods material materials modern theory of ferroelectrics nanoscale systems oxides tables thin films

Editors and affiliations

  • Karin M. Rabe
    • 1
  • Charles H. Ahn
    • 2
  • Jean-Marc Triscone
    • 3
  1. 1.Department of Physics and AstronomyRutgers UniversityPiscatawayUSA
  2. 2.Departements of Applied Physics and PhysicsYale UniversityNew HavenUSA
  3. 3.Condensed Matter Physics DepartmentUniversity of GenevaGeneva 4Switzerland

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-540-34591-6
  • Copyright Information Springer-Verlag Berlin/Heidelberg 2007
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-540-34590-9
  • Online ISBN 978-3-540-34591-6
  • Series Print ISSN 0303-4216
  • Series Online ISSN 1437-0859