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Fundamentals of Power Semiconductor Devices

  • B. Jayant Baliga

Table of contents

  1. Front Matter
    Pages i-xxxii
  2. B. Jayant Baliga
    Pages 1-22
  3. B. Jayant Baliga
    Pages 23-87
  4. B. Jayant Baliga
    Pages 89-170
  5. B. Jayant Baliga
    Pages 171-206
  6. B. Jayant Baliga
    Pages 207-282
  7. B. Jayant Baliga
    Pages 283-520
  8. B. Jayant Baliga
    Pages 521-639
  9. B. Jayant Baliga
    Pages 641-753
  10. B. Jayant Baliga
    Pages 755-1044
  11. B. Jayant Baliga
    Pages 1045-1066
  12. Back Matter
    Pages 1067-1086

About this book

Introduction

This textbook provides an in-depth treatment of the physics of power semiconductor devices that are commonly used by the power electronics industry.  Drawing upon decades of industry and teaching experience and using numerous examples and illustrative applications, the author discusses in detail the various device performance attributes that allow practicing engineers to develop energy-efficient products. Coverage includes all types of power rectifiers and transistors and analytical models for explaining the operation of all power semiconductor devices are developed and demonstrated in each section of the book. Throughout the book, emphasis is placed on deriving simple analytical expressions that describe the underlying physics and enable representation of the device electrical characteristics. This treatment is invaluable for teaching a course on power devices because it allows the operating principles and concepts to be conveyed with quantitative analysis.  The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.  This new edition also includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions. 

  • Provides comprehensive textbook for courses on physics of power semiconductor devices;
  • Includes extensive analytical formulations for design and analysis of device structures;
  • Uses numerical simulation examples in every section to elucidate the operating physics and validate the models;
  • Analyzes device performance attributes that enable development of real, energy-efficient products;
  • Includes numerous exercises in each chapter to reinforce concepts introduced;
  • Includes a chapter on the impact of power semiconductor devices on energy savings and reduction of carbon emissions.

Keywords

Leistungsfeldeffekttransistor Schottky rectifiers Thyristor Transistor bipolar junction transistor field-effect transistor metal oxide semiconductur field-effect transistor power electronics semiconductor devices silicon devices transport physics

Authors and affiliations

  • B. Jayant Baliga
    • 1
  1. 1.RaleighUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-93988-9
  • Copyright Information Springer International Publishing AG, part of Springer Nature 2019
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-93987-2
  • Online ISBN 978-3-319-93988-9
  • Buy this book on publisher's site