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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

  • Gaudenzio Meneghesso
  • Matteo Meneghini
  • Enrico Zanoni

Part of the Integrated Circuits and Systems book series (ICIR)

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Joff Derluyn, Marianne Germain, Elke Meissner
    Pages 1-28
  3. Chang Soo Suh
    Pages 29-49
  4. Srabanti Chowdhury, Dong Ji
    Pages 51-74
  5. Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Maria Ruzzarin, Isabella Rossetto
    Pages 75-99
  6. Kenichiro Tanaka, Ayanori Ikoshi, Tetsuzo Ueda
    Pages 101-122
  7. Fred Wang, Bo Liu
    Pages 153-180
  8. David J. Perreault, Charles R. Sullivan, Juan M. Rivas
    Pages 181-223
  9. Back Matter
    Pages 225-232

About this book

Introduction

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.


  • Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  • Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
  • Enables design of smaller, cheaper and more efficient power supplies.

Keywords

Gallium Nitride GaN device physics GaN for Power Conversion GaN transistors GaN Reliability

Editors and affiliations

  • Gaudenzio Meneghesso
    • 1
  • Matteo Meneghini
    • 2
  • Enrico Zanoni
    • 3
  1. 1.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly
  2. 2.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly
  3. 3.Department of Information EngineeringUniversity of Padova - DEIPadovaItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-77994-2
  • Copyright Information Springer International Publishing AG, part of Springer Nature 2018
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-77993-5
  • Online ISBN 978-3-319-77994-2
  • Series Print ISSN 1558-9412
  • Buy this book on publisher's site