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Phase Change Memory

Device Physics, Reliability and Applications

  • Andrea Redaelli

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Agostino Pirovano
    Pages 1-10
  3. Andrea Redaelli
    Pages 65-88
  4. Robert Gleixner
    Pages 89-124
  5. Pierre Noé, Françoise Hippert
    Pages 125-179
  6. Véronique Sousa, Gabriele Navarro
    Pages 181-222
  7. Hasan Hayat, Krisztian I. Kohary, C. David Wright
    Pages 223-262
  8. Fabio Pellizzer
    Pages 263-284
  9. Corrado Villa
    Pages 285-311
  10. Gregory Atwood
    Pages 313-324
  11. Back Matter
    Pages 325-330

About this book

Introduction

This book describes the physics of phase change memory devices, starting from basic operation to reliability issues. The book gives a comprehensive overlook of PCM with particular attention to the electrical transport and the phase transition physics between the two states. The book also contains design engineering details on PCM cell architecture, PCM cell arrays (including electrical circuit management), as well as the full spectrum of possible future applications.

Keywords

Non volatile memory chalcogenide glasses semiconductor chip PCM device physics PCM array management

Editors and affiliations

  • Andrea Redaelli
    • 1
  1. 1.Micron Semiconductor Italia S.r.l.VimercateItaly

Bibliographic information