Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces

  • Raphael Schlesinger

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Raphael Schlesinger
    Pages 1-6
  3. Raphael Schlesinger
    Pages 7-45
  4. Raphael Schlesinger
    Pages 47-76
  5. Raphael Schlesinger
    Pages 77-90
  6. Raphael Schlesinger
    Pages 91-180
  7. Raphael Schlesinger
    Pages 181-184
  8. Back Matter
    Pages 185-211

About this book


This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.


Hybrid Inorganic Organic Systems HIOS Zinc Oxide Organic Hybrid Semiconductor Interface Energy-level Alignment Gap State Density Adsorption–induced Band Bending Photoelectron Spectroscopy Work Function Tuning Interlayer Method

Authors and affiliations

  • Raphael Schlesinger
    • 1
  1. 1.Institut für PhysikHumboldt-Universität zu Berlin BerlinGermany

Bibliographic information