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Tunneling Field Effect Transistor Technology

  • Lining Zhang
  • Mansun Chan

Table of contents

  1. Front Matter
    Pages i-ix
  2. Lining Zhang, Jun Huang, Mansun Chan
    Pages 1-31
  3. Tao Yu, Judy L. Hoyt, Dimitri A. Antoniadis
    Pages 33-60
  4. Lining Zhang, Mansun Chan
    Pages 61-87
  5. Ming-Long Fan, Yin-Nien Chen, Pin Su, Ching-Te Chuang
    Pages 89-109
  6. Fei Liu, Qing Shi, Jian Wang, Hong Guo
    Pages 111-149
  7. Jun Z. Huang, Lining Zhang, Pengyu Long, Michael Povolotskyi, Gerhard Klimeck
    Pages 151-180
  8. Back Matter
    Pages 211-213

About this book

Introduction

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs).  Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. 

·         Provides comprehensive reference to tunneling field effect transistors (TFETs);

·         Covers all aspects of TFETs, from device process to modeling and applications;

·         Enables design of power-efficient integrated circuits, with low power consumption TFETs.

Keywords

Carbon Nanotube TFETs Low Power SRAM Design MOSFETs Nanoscaled Field Effect Transistors Nanowire Field Effect Transistors TFETs Tunneling Field Effect Transistors

Editors and affiliations

  • Lining Zhang
    • 1
  • Mansun Chan
    • 2
  1. 1.and TechnologyHong Kong University of ScienceHong KongChina
  2. 2.and TechnologyHong Kong University of ScienceHong KongChina

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-31653-6
  • Copyright Information Springer International Publishing Switzerland 2016
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-31651-2
  • Online ISBN 978-3-319-31653-6
  • Buy this book on publisher's site