Silicon Containing Copolymers

  • Sahar Amiri
  • Mohammad Ali Semsarzadeh
  • Sanam Amiri

Part of the SpringerBriefs in Molecular Science book series (BRIEFSMOLECULAR)

Table of contents

  1. Front Matter
    Pages i-x
  2. Sahar Amiri, Mohammad Ali Semsarzadeh, Sanam Amiri
    Pages 1-3
  3. Sahar Amiri, Mohammad Ali Semsarzadeh, Sanam Amiri
    Pages 13-24

About this book


Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.


Block Copolymers Cobalt Mediated Radical Polymerization Cyclodextrins Copolymers Poly(dimethyl siloxane), PDMS Thermoreversible Block Copolymers

Authors and affiliations

  • Sahar Amiri
    • 1
  • Mohammad Ali Semsarzadeh
    • 2
  • Sanam Amiri
    • 3
  1. 1.Chemical EngineeringTabiat Modares UniversityTehranIran
  2. 2.Tabiat Modares UniversityTehranIran
  3. 3.Amir Kabir University Of TechnologyTehranIran

Bibliographic information

  • DOI
  • Copyright Information The Author(s) 2014
  • Publisher Name Springer, Cham
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-319-09224-9
  • Online ISBN 978-3-319-09225-6
  • Series Print ISSN 2191-5407
  • Series Online ISSN 2191-5415
  • About this book