GaP Heteroepitaxy on Si(100)

Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients

  • Henning Döscher

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Henning Döscher
    Pages 1-5
  3. Henning Döscher
    Pages 7-15
  4. Henning Döscher
    Pages 67-90
  5. Henning Döscher
    Pages 91-140
  6. Henning Döscher
    Pages 141-143

About this book


Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.


Anti-phase Disorder III-V Semiconductor Heteroepitaxy on Silicon Substrates In Situ Reflectance Anisotropy Spectroscopy Lattice-matched Growth Materials for Photovoltaics Metal-organic Vapor Phase Epitaxy Polar on Non-polar Interface

Authors and affiliations

  • Henning Döscher
    • 1
  1. 1.FG PhotovoltaikTU Ilmenau Institut f. PhysikIlmenauGermany

Bibliographic information