Debye Screening Length

Effects of Nanostructured Materials

  • Kamakhya Prasad Ghatak
  • Sitangshu Bhattacharya

Part of the Springer Tracts in Modern Physics book series (STMP, volume 255)

Table of contents

  1. Front Matter
    Pages i-xxxiii
  2. Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors

    1. Front Matter
      Pages 1-1
    2. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 3-61
    3. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 63-75
    4. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 77-106
  3. Influence of Light Waves on the DSL in Opto-Electronic Semiconductors

    1. Front Matter
      Pages 107-107
    2. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 109-131
    3. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 151-162
  4. Influence of Intense Electric Field on the DSL in Opto-Electronic Semiconductors

    1. Front Matter
      Pages 177-177
    2. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 179-211
    3. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 213-250
    4. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 251-254
  5. Appendices

    1. Front Matter
      Pages 255-255
    2. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 257-270
    3. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 271-298
    4. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 299-320
    5. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya
      Pages 321-341

About this book

Introduction

This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.

Keywords

Compound Semiconductors Debye Screening Length Inversion Layers Inversion Layers of Non-Parabolic Semiconductors Low-Simensional Semiconductors NIPIS Quantized Optoelectronic Semiconductors Quantum Confinement Quantum Wells

Authors and affiliations

  • Kamakhya Prasad Ghatak
    • 1
  • Sitangshu Bhattacharya
    • 2
  1. 1.Department of Electronic ScienceUniversity of CalcuttaKolkataIndia
  2. 2.Centre for Electronics Design Technology Nanoscale Device Research LaboratoryIndian Institute of ScienceBangaloreIndia

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-01339-8
  • Copyright Information Springer International Publishing Switzerland 2014
  • Publisher Name Springer, Cham
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-319-01338-1
  • Online ISBN 978-3-319-01339-8
  • Series Print ISSN 0081-3869
  • Series Online ISSN 1615-0430
  • About this book