High-Frequency GaN Electronic Devices

  • Patrick Fay
  • Debdeep Jena
  • Paul Maki

Table of contents

  1. Front Matter
    Pages i-viii
  2. Patrick Fay, Debdeep Jena, Paul Maki
    Pages 1-3
  3. Samuel James Bader, Keisuke Shinohara, Alyosha Molnar
    Pages 83-107
  4. Zhichao Yang, Digbijoy N. Nath, Yuewei Zhang, Sriram Krishnamoorthy, Jacob Khurgin, Siddharth Rajan
    Pages 109-157
  5. Hugo O. Condori Quispe, Berardi Sensale-Rodriguez, Patrick Fay
    Pages 159-179
  6. Jimy Encomendero, Debdeep Jena, Huili Grace Xing
    Pages 215-247
  7. W. D. Zhang, T. A. Growden, E. R. Brown, P. R. Berger, D. F. Storm, D. J. Meyer
    Pages 249-281
  8. Kubilay Sertel, Georgios C. Trichopoulos
    Pages 283-299
  9. Back Matter
    Pages 301-309

About this book


This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system.  Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail.  In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included.  Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications.  

  • Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field;
  • Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes;
  • Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques;
  • Includes fundamental physics, as well as numerical simulations and experimental realizations.


Gallium Nitride Electronics Gallium Nitride Physics, Devices, and Technology THz electronics GaN transistor GaN material properties

Editors and affiliations

  • Patrick Fay
    • 1
  • Debdeep Jena
    • 2
  • Paul Maki
    • 3
  1. 1.University of Notre DameNotre DameUSA
  2. 2.Cornell UniversityIthacaUSA
  3. 3.Office of Naval ResearchArlingtonUSA

Bibliographic information