Emerging Non-Volatile Memories

  • Seungbum Hong
  • Orlando Auciello
  • Dirk Wouters

Table of contents

  1. Front Matter
    Pages i-xii
  2. Ferroic Memories

    1. Front Matter
      Pages 1-1
    2. Orlando Auciello, Carlos A. Paz de Araujo, Jolanta Celinska
      Pages 3-35
    3. B. Dieny, R. Sousa, G. Prenat, L. Prejbeanu, O. Redon
      Pages 37-101
    4. Lane W. Martin, Ying-Hao Chu, R. Ramesh
      Pages 103-166
  3. Resistance and Phase Change Memories

    1. Front Matter
      Pages 167-167
    2. Dominic Lencer, Martin Salinga, Matthias Wuttig
      Pages 169-193
    3. Myoung-Jae Lee
      Pages 195-218
    4. J. Joshua Yang, Gilberto Medeiros-Ribeiro
      Pages 219-256
  4. Probe Memories

    1. Front Matter
      Pages 257-257
    2. Seungbum Hong, Yunseok Kim
      Pages 259-273

About this book

Introduction

This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.

This book also:

Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.

Provides an overview of non-volatile memory fundamentals.

Broadens readers’ understanding of future trends in non-volatile memories.

Keywords

FMRAM FeRAM Ferroelectric memories Information storage MFRAM Magnetic memories Multi-ferroic memories NVM Nonvolatile memories PCM Polymer memories Probe memories RRAM

Editors and affiliations

  • Seungbum Hong
    • 1
  • Orlando Auciello
    • 2
  • Dirk Wouters
    • 3
  1. 1.Materials Science DivisionArgonne National LaboratoryLemontUSA
  2. 2.Materials Science & Engg Dept. and Bioengineering Dept.University of Texas-DallasDallasUSA
  3. 3.CMOS Technology DivisionIMECLeuvenBelgium

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4899-7537-9
  • Copyright Information Springer Science+Business Media New York 2014
  • Publisher Name Springer, Boston, MA
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-1-4899-7536-2
  • Online ISBN 978-1-4899-7537-9
  • About this book