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High-Resolution X-Ray Scattering

From Thin Films to Lateral Nanostructures

  • Ullrich Pietsch
  • Václav Holý
  • Tilo Baumbach

Part of the Advanced Texts in Physics book series (ADTP)

Table of contents

  1. Front Matter
    Pages I-XVI
  2. Experimental Realization

    1. Front Matter
      Pages 1-3
    2. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 5-29
    3. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 31-42
    4. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 43-58
  3. Basic Principles

    1. Front Matter
      Pages 59-62
    2. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 63-74
    3. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 75-95
    4. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 97-121
    5. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 123-135
  4. Solution of Experimental Problems

    1. Front Matter
      Pages 137-141
    2. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 143-178
    3. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 179-203
    4. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 205-233
    5. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 235-272
  5. X-Ray Scattering by Laterally Structured Semiconductor Nano-Structures

    1. Front Matter
      Pages 273-278
    2. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 279-316
    3. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 317-352
    4. Ullrich Pietsch, Václav Holý, Tilo Baumbach
      Pages 353-387
  6. Back Matter
    Pages 389-408

About this book

Introduction

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap­ pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

Keywords

Semiconductor X-ray scattering crystal diffraction nanostructure quantum dot thin film thin films

Authors and affiliations

  • Ullrich Pietsch
    • 1
  • Václav Holý
    • 2
  • Tilo Baumbach
    • 3
  1. 1.Institute of PhysicsUniversity of PotsdamPotsdamGermany
  2. 2.Department of Solid State PhysicsMasaryk UniversityBrnoCzech Republic
  3. 3.Institut fuer SynchrotronstrahlungForschungszentrum Karlsruhe in der Helmholtz-GemeinschaftKarlsruheGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4757-4050-9
  • Copyright Information Springer-Verlag New York 2004
  • Publisher Name Springer, New York, NY
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4419-2307-3
  • Online ISBN 978-1-4757-4050-9
  • Series Print ISSN 1439-2674
  • Buy this book on publisher's site