Nondestructive Evaluation of Semiconductor Materials and Devices

  • Jay N. Zemel

Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 46)

About this book

Introduction

From September 19-29, a NATO Advanced Study Institute on Non­ destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele­ rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub­ stantial immediate concern to the device technologies and end users.

Keywords

material materials measurement scanning semiconductor stress X-ray

Editors and affiliations

  • Jay N. Zemel
    • 1
  1. 1.The University of PennsylvaniaPhiladelphiaUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4757-1352-7
  • Copyright Information Springer-Verlag US 1979
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4757-1354-1
  • Online ISBN 978-1-4757-1352-7
  • Series Print ISSN 0258-1221
  • About this book