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Characterization of Crystal Growth Defects by X-Ray Methods

  • Brian K. Tanner
  • D. Keith Bowen

Part of the Nato Advanced Study Institutes Series book series (NSSB, volume 63)

Table of contents

  1. Front Matter
    Pages i-xxvi
  2. Eugene S. Meieran
    Pages 1-27
  3. D. T. J. Hurle, B. Cockayne
    Pages 46-72
  4. J. R. Patel
    Pages 73-96
  5. G. Champier
    Pages 97-132
  6. H. Klapper
    Pages 133-160
  7. A. R. Lang
    Pages 161-185
  8. Michael Hart
    Pages 216-263
  9. N. Kato
    Pages 264-297
  10. U. Bonse
    Pages 298-319
  11. A. R. Lang
    Pages 320-332
  12. D. Keith Bowen
    Pages 333-348
  13. Michele Sauvage
    Pages 433-455
  14. W. Hartmann
    Pages 497-502
  15. Moreton Moore, Ian O. Angell
    Pages 503-505
  16. D. Keith Bowen
    Pages 506-511
  17. A. R. Lang
    Pages 512-514
  18. R. W. Armstrong
    Pages 515-519
  19. Back Matter
    Pages 520-589

About this book

Introduction

This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

Keywords

Aluminium X-ray crystal diffraction materials

Editors and affiliations

  • Brian K. Tanner
    • 1
  • D. Keith Bowen
    • 2
  1. 1.Department of PhysicsDurham UniversityDurhamUK
  2. 2.Department of EngineeringWarwick UniversityCoventryUK

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4757-1126-4
  • Copyright Information Springer-Verlag US 1980
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4757-1128-8
  • Online ISBN 978-1-4757-1126-4
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site