Heavily Doped Semiconductors

  • Victor I. Fistul’

Part of the Monographs in Semiconductor Physics book series (MOSEPH, volume 1)

Table of contents

  1. Front Matter
    Pages N3-xi
  2. Victor I. Fistul’
    Pages 1-4
  3. Victor I. Fistul’
    Pages 77-205
  4. Victor I. Fistul’
    Pages 207-244
  5. Victor I. Fistul’
    Pages 245-280
  6. Victor I. Fistul’
    Pages 281-315
  7. Victor I. Fistul’
    Pages 317-366
  8. Back Matter
    Pages 367-418

About this book

Introduction

Recently, there has been a considerable upsurge of interest in heavily doped semiconductors. This interest is due primarily to the expanding range of applications of such. materials. Moreover, the heavy doping of semiconductors produces new effects (the forma­ tion of impurity aggregates, the appearance of allowed states in the forbidden band, etc J, which are of great interest in solid-state physics. The rapid growth in the number of papers on heavily doped semiconductors makes it difficult to review the results obtained so far. Therefore, many investigations carried out in 1966-7, par­ ticularly those on AIIIBV semiconductors, are not discussed in the present monograph, which represents the state of the knowledge in 1965. Nevertheless, the author hopes that, in spite of this, the book will be useful. An attempt is made, first, to review investigations of heavily doped semiconductors from a certain viewpoint and, sec­ ondly, to suggest some ideas (Chap. 5) which may be controversial but which are intended to stimulate further studies of heavily doped semiconductors which can be regarded as a special case of dis­ ordered systems. The work of American scientists investigating heavily doped semiconductors, in particular the efforts of E. O. Kane, J. 1. Pan­ kove, R. N. Hall, R. A. Logan, W. G. Spitzer, F. A. Trumbore, and many others, is well known to Soviet investigators. It gives me pleasure to learn that Western readers will now have an - v vi PREFACE portunity to become acquainted with the work done in the USSR.

Keywords

Doping crystal electron growth paper physics scattering semiconductor solid-state physics

Authors and affiliations

  • Victor I. Fistul’
    • 1
  1. 1.Institute for Fine Chemical TechnologyAcademy of Sciences of the USSRMoscowUSSR

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4684-8821-0
  • Copyright Information Springer-Verlag US 1969
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-8823-4
  • Online ISBN 978-1-4684-8821-0
  • About this book