Disordered Materials

Science and Technology

  • David Adler
  • Brian B. Schwartz
  • Marvin Silver

Part of the Institute for Amorphous Studies Series book series (IASS)

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Introduction

    1. David Adler, Brian B. Schwartz, Marvin Silver
      Pages 1-7
  3. Chemistry and Physics of Disordered Materials

    1. Front Matter
      Pages 9-9
    2. Morrel H. Cohen, H. Fritzsche, S. R. Ovshinsky
      Pages 14-16
    3. E. J. Evans, J. H. Helbers, S. R. Ovshinsky
      Pages 17-22
    4. A. Bienenstock, F. Betts, S. R. Ovshinsky
      Pages 23-26
    5. Stanford R. Ovshinsky, Iris M. Ovshinsky
      Pages 30-33
    6. J. Feinleib, J. deNeufville, S. C. Moss, S. R. Ovshinsky
      Pages 34-37
    7. Stanford R. Ovshinsky
      Pages 48-50
    8. R. Flasck, M. Izu, K. Sapru, T. Anderson, S. R. Ovshinsky, H. Fritzsche
      Pages 51-53
    9. Stanford R. Ovshinsky, Arun Madan
      Pages 64-65
    10. D. Adler, M. S. Shur, M. Silver, S. R. Ovshinsky
      Pages 66-87
    11. A. Madan, S. R. Ovshinsky
      Pages 88-93
    12. R. Tsu, M. Izu, S. R. Ovshinsky, F. H. Pollak
      Pages 94-98
    13. R. Tsu, S. S. Chao, S. R. Ovshinsky, G. J. Jan, F. H. Pollak
      Pages 99-101
    14. A. S. Edelstein, S. R. Ovshinsky, H. Sadate-Akhavi, J. Wood
      Pages 102-105
    15. A. M. Kadin, R. W. Burkhardt, J. T. Chen, J. E. Keem, S. R. Ovshinsky
      Pages 106-109
    16. J. Wood, J. E. Keem, J. T. Chen, A. M. Kadin, R. W. Burkhardt, S. R. Ovshinsky
      Pages 110-113
    17. R. Tsu, J. Gonzalez-Hernandez, J. Doehler, S. R. Ovshinsky
      Pages 122-125
    18. R. Tsu, D. Martin, J. Gonzalez-Hernandez, S. R. Ovshinsky
      Pages 126-131
    19. S. J. Hudgens, A. G. Johncock, S. R. Ovshinsky
      Pages 144-146
    20. S. R. Ovshinsky, R. T. Young, D. D. Allred, G. DeMaggio, G. A. Van der Leeden
      Pages 152-154
    21. S. R. Ovshinsky, R. T. Young, B. S. Chao, G. Fournier, D. A. Pawlik
      Pages 155-159
    22. S. R. Ovshinsky, S. J. Hudgens, R. L. Lintvedt, D. B. Rorabacher
      Pages 160-166
  4. Device Applications

    1. Front Matter
      Pages 167-167
    2. Stanford R. Ovshinsky, E. J. Evans, D. L. Nelson, H. Fritzsche
      Pages 174-183
    3. J. Feinleib, S. Iwasa, S. C. Moss, J. P. deNeufville, S. R. Ovshinsky
      Pages 188-191
    4. S. R. Ovshinsky, P. H. Klose
      Pages 192-194
    5. R. F. Shaw, H. Fritzsche, M. Silver, P. Smejtek, S. Holmberg, S. R. Ovshinsky
      Pages 195-197
    6. J. P. deNeufville, R. Seguin, S. C. Moss, S. R. Ovshinsky
      Pages 198-202
    7. S. R. Ovshinsky
      Pages 203-205
    8. Stanford R. Ovshinsky, Arun Madan
      Pages 206-210
    9. A. Madan, J. McGill, W. Czubatyj, J. Yang, S. R. Ovshinsky
      Pages 211-213
    10. John P. deNeufville, Matsatsuga Izu, Stanford R. Ovshinsky
      Pages 214-217
    11. David Adler, Stanford R. Ovshinsky
      Pages 218-226
    12. Stanford R. Ovshinsky
      Pages 232-237

About this book


Landmark contributions to science and mechanisms for the origin of the phenomena, and technology are rarely recognized at the time of reached important conclusions about the physical publication. Few people, even in technical areas, nature of the materials at equilibrium and their recogni zed the importance of developments such as electronic nonequilibrium properties. Many of these the transistor, the laser, or electrophotography ideas were condensed into a publication for Physical until well after their successful demonstration. Review Letters, paper 1 in this collection. This So-called experts, in fact, tend to resist new paper immediately attracted attention to the field, inventions, a natural instinct based on a combina­ and directly lead to the initiation of large research tion of fear of obsolescent expertise and jealousy efforts at both industrial laboratories and univer- arising from lack of active participation in the ties throughout the world. Inevitably, there was discovery. the usual amount of controversy, with many experts Denigration of new ideas is a relatively simultaneously taking positions (2) and (3) above. safe modus operandi, since the vast majority It has now been well over 20 years since eventually are abandoned well short of commerciality. the original publication date, and an objective view However, a successful device can be identified by can be taken in hindsight.


adsorption ceramics chemistry crystal crystallization development diffusion glass laser photography scattering semiconductor semiconductors superconductivity thin films

Editors and affiliations

  • David Adler
    • 1
  • Brian B. Schwartz
    • 2
    • 3
  • Marvin Silver
    • 4
  1. 1.Late of Massachusetts Institute of TechologyCambridgeUSA
  2. 2.Institute for Amorphous StudiesBloomfield HillsUSA
  3. 3.Brooklyn College of the City University of New YorkBrooklynUSA
  4. 4.University of North CarolinaChapel HillUSA

Bibliographic information