Properties of Impurity States in Superlattice Semiconductors

  • C. Y. Fong
  • Inder P. Batra
  • S. Ciraci

Part of the NATO ASI Series book series (NSSB, volume 183)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Growth Techniques and Characterizations of Superlattice Semiconductors

  3. Deep and Shallow Impurity States

    1. Front Matter
      Pages 75-75
    2. Jacques C. Bourgoin, Michel Lannoo
      Pages 77-84
    3. Dominique Vuillaume, Didier Stiévenard
      Pages 107-120
    4. L. Eaves, J. C. Portal, D. K. Maude, T. J. Foster
      Pages 121-134
    5. W. Prost, W. Brockerhoff, M. Heuken, S. Kugler, K. Heime, W. Schlapp et al.
      Pages 135-146
    6. John D. Dow, Shang Yuan Ren, Jun Shen
      Pages 175-187
  4. Quantum Well States

    1. Front Matter
      Pages 193-193
    2. U. Rössler, F. Malcher, A. Ziegler
      Pages 219-228
    3. N. Balkan, B. K. Ridley
      Pages 229-244
    4. W. Ossau, B. Jäkel, E. Bangert, G. Weimann
      Pages 285-294
  5. Two Dimensional and Other Electronic Properties

  6. Back Matter
    Pages 347-351

About this book


A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im­ purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.


electron microscopy optics scattering semiconductor transmission electron microscopy

Editors and affiliations

  • C. Y. Fong
    • 1
  • Inder P. Batra
    • 2
  • S. Ciraci
    • 3
  1. 1.University of California, DavisDavisUSA
  2. 2.IBM Almaden Research CenterSan JoseUSA
  3. 3.Bikent UniversityAnkaraTurkey

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag US 1988
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-5555-7
  • Online ISBN 978-1-4684-5553-3
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site