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Cryogenic Operation of Silicon Power Devices

  • Ranbir Singh
  • B. Jayant Baliga

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Ranbir Singh, B. Jayant Baliga
    Pages 1-10
  3. Ranbir Singh, B. Jayant Baliga
    Pages 11-24
  4. Ranbir Singh, B. Jayant Baliga
    Pages 25-35
  5. Ranbir Singh, B. Jayant Baliga
    Pages 37-48
  6. Ranbir Singh, B. Jayant Baliga
    Pages 49-63
  7. Ranbir Singh, B. Jayant Baliga
    Pages 65-81
  8. Ranbir Singh, B. Jayant Baliga
    Pages 83-94
  9. Ranbir Singh, B. Jayant Baliga
    Pages 95-103
  10. Ranbir Singh, B. Jayant Baliga
    Pages 105-115
  11. Ranbir Singh, B. Jayant Baliga
    Pages 117-126
  12. Ranbir Singh, B. Jayant Baliga
    Pages 127-135
  13. Back Matter
    Pages 137-148

About this book

Introduction

The advent of low temperature superconductors in the early 1960's converted what had been a laboratory curiosity with very limited possibilities to a prac­ tical means of fabricating electrical components and devices with lossless con­ ductors. Using liquid helium as a coolant, the successful construction and operation of high field strength magnet systems, alternators, motors and trans­ mission lines was announced. These developments ushered in the era of what may be termed cryogenic power engineering and a decade later successful oper­ ating systems could be found such as the 5 T saddle magnet designed and built in the United States by the Argonne National Laboratory and installed on an experimental power generating facility at the High Temperature Institute in Moscow, Russia. The field of digital computers provided an incentive of a quite different kind to operate at cryogenic temperatures. In this case, the objective was to ob­ tain higher switching speeds than are possible at ambient temperatures with the critical issue being the operating characteristics of semiconductor switches under cryogenic conditions. By 1980, cryogenic electronics was established as another branch of electric engineering.

Keywords

Diode JFET MOSFET Thyristor control diodes environment material model tables transistor

Authors and affiliations

  • Ranbir Singh
    • 1
  • B. Jayant Baliga
    • 1
  1. 1.Power Semiconductor Research CenterNorth Carolina State UniversityRaleighUSA

Bibliographic information