Fundamentals of Nanoscaled Field Effect Transistors

  • Amit Chaudhry

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Amit Chaudhry
    Pages 1-24
  3. Amit Chaudhry
    Pages 61-72
  4. Amit Chaudhry
    Pages 73-83
  5. Amit Chaudhry
    Pages 85-131
  6. Amit Chaudhry
    Pages 133-152
  7. Amit Chaudhry
    Pages 169-175
  8. Back Matter
    Pages 177-201

About this book


Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

In summary, this book:

Covers the fundamental principles behind nanoelectronics/microelectronics

Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale

Provides some case studies to understand the issue mathematically

Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.


Ballistic Effect Devices Biaxial Strained Si Technology Compact MOSFET Models Electron Devices MOSFETs at Nanoscale Nanoscale MOS Transistors Nanoscale MOSFET Transistor Quantum Effects

Authors and affiliations

  • Amit Chaudhry
    • 1
  1. 1., University Institute of Eng. and Tech.Panjab UniversityChandigarhIndia

Bibliographic information

  • DOI
  • Copyright Information Springer Science+Business Media New York 2013
  • Publisher Name Springer, New York, NY
  • eBook Packages Engineering
  • Print ISBN 978-1-4614-6821-9
  • Online ISBN 978-1-4614-6822-6
  • Buy this book on publisher's site