© 1984

The Physics of Submicron Structures

  • H. L. Grubin
  • K. Hess
  • G. J. Iafrate
  • D. K. Ferry

Table of contents

  1. Front Matter
    Pages i-x
  2. Johnson Lee, M. O. Vassell, H. F. Lockwood
    Pages 33-39
  3. Nuyen T. Linh, D. Delagebeaudeuf
    Pages 53-61
  4. H. L. Grubin, J. P. Kreskovsky, G. J. Iafrate, D. K. Ferry, R. F. Greene
    Pages 63-75
  5. F. A. Buot, Jeffrey Frey
    Pages 77-92
  6. D. Lippens, E. Constant, M. R. Friscourt, P. A. Rolland, G. Salmer
    Pages 93-99
  7. P. Hesto, J. F. Pone, R. Castagné, J. L. Pelouard
    Pages 101-106
  8. Hao Chu, M. Charef, J. Zimmermann, R. Fauquembergue, E. Constant
    Pages 107-113
  9. H. Shichijo, Y. T. Lin, T. C. Holloway, Y. C. Lin, W. R. Hunter
    Pages 115-125
  10. Young June Park, Ting-Wei Tang, David H. Navon
    Pages 127-138
  11. Karl R. Hofmann, Gerhard Dorda
    Pages 139-146
  12. D. F. Nelson, J. A. Cooper Jr.
    Pages 147-158
  13. A. A. Maradudin
    Pages 159-169
  14. R. Fauquembergue, M. Pernisek, E. Constant
    Pages 171-176
  15. R. J. Trew, R. Sultan, J. R. Hauser, M. A. Littlejohn
    Pages 177-183
  16. Peter A. Blakey, Steven S. Cherensky, Paul Summers
    Pages 185-194

About this book


Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi­ tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro­ ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup­ port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.


In silico development diffusion electron influence metals paper physics scattering semiconductor silicon simulation spectroscopy structure transport

Editors and affiliations

  • H. L. Grubin
    • 1
  • K. Hess
    • 2
  • G. J. Iafrate
    • 3
  • D. K. Ferry
    • 4
  1. 1.Scientific Research Associates, Inc.GlastonburyUSA
  2. 2.University of IllinoisUrbana-ChampaignUSA
  3. 3.U.S. Army Electronics Technology and Devices LaboratoryFort MonmouthUSA
  4. 4.Arizona State UniversityTempeUSA

Bibliographic information

  • Book Title The Physics of Submicron Structures
  • Editors Harold L. Grubin
  • DOI
  • Copyright Information Springer-Verlag US 1984
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Hardcover ISBN 978-0-306-41715-3
  • Softcover ISBN 978-1-4612-9714-7
  • eBook ISBN 978-1-4613-2777-6
  • Edition Number 1
  • Number of Pages X, 360
  • Number of Illustrations 0 b/w illustrations, 0 illustrations in colour
  • Topics Solid State Physics
    Spectroscopy and Microscopy
  • Buy this book on publisher's site