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The Physics of Submicron Structures

  • H. L. Grubin
  • K. Hess
  • G. J. Iafrate
  • D. K. Ferry

Table of contents

  1. Front Matter
    Pages i-x
  2. Johnson Lee, M. O. Vassell, H. F. Lockwood
    Pages 33-39
  3. Nuyen T. Linh, D. Delagebeaudeuf
    Pages 53-61
  4. H. L. Grubin, J. P. Kreskovsky, G. J. Iafrate, D. K. Ferry, R. F. Greene
    Pages 63-75
  5. F. A. Buot, Jeffrey Frey
    Pages 77-92
  6. D. Lippens, E. Constant, M. R. Friscourt, P. A. Rolland, G. Salmer
    Pages 93-99
  7. P. Hesto, J. F. Pone, R. Castagné, J. L. Pelouard
    Pages 101-106
  8. Hao Chu, M. Charef, J. Zimmermann, R. Fauquembergue, E. Constant
    Pages 107-113
  9. H. Shichijo, Y. T. Lin, T. C. Holloway, Y. C. Lin, W. R. Hunter
    Pages 115-125
  10. Young June Park, Ting-Wei Tang, David H. Navon
    Pages 127-138
  11. Karl R. Hofmann, Gerhard Dorda
    Pages 139-146
  12. D. F. Nelson, J. A. Cooper Jr.
    Pages 147-158
  13. A. A. Maradudin
    Pages 159-169
  14. R. Fauquembergue, M. Pernisek, E. Constant
    Pages 171-176
  15. R. J. Trew, R. Sultan, J. R. Hauser, M. A. Littlejohn
    Pages 177-183
  16. Peter A. Blakey, Steven S. Cherensky, Paul Summers
    Pages 185-194
  17. A. Ghis, B. Boittiaux, R. Fauquembergue, E. Constant
    Pages 203-210
  18. P. Lugli, R. O. Grondin, D. K. Ferry
    Pages 211-217
  19. C. Bru, D. Pascal, S. Laval, C. Arnodo, R. Castagné
    Pages 219-223
  20. J. W. Little, T. L. Ferrell, T. A. Callcott, E. T. Arakawa
    Pages 233-238
  21. T. Wang, J. P. Leburton, Karl Hess
    Pages 239-246
  22. J. B. Socha, F. A. Buot, J. A. Krumhansl
    Pages 247-252
  23. T. H. Windhorn, L. W. Cook, T. J. Roth, G. E. Stillman
    Pages 253-259
  24. M. W. Muller, P. Roblin, D. L. Rode
    Pages 261-266
  25. David K. Ferry, Robert O. Grondin, Robert K. Reich, Harold L. Grubin, Gerald J. Iafrate
    Pages 267-275
  26. H. U. Baranger, J. W. Wilkins
    Pages 295-300
  27. Deva N. Pattanayak, Ross A. Williams, John G. Poksheva
    Pages 313-320
  28. D. S. Pan, C. C. Yang, C. F. Jou, B. Jogai
    Pages 327-331
  29. R. F. Greene, H. L. Grubin, G. J. Iafrate
    Pages 333-339
  30. Back Matter
    Pages 349-360

About this book

Introduction

Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi­ tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro­ ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup­ port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.

Keywords

In silico development diffusion electron influence metals paper physics scattering semiconductor silicon simulation spectroscopy structure transport

Editors and affiliations

  • H. L. Grubin
    • 1
  • K. Hess
    • 2
  • G. J. Iafrate
    • 3
  • D. K. Ferry
    • 4
  1. 1.Scientific Research Associates, Inc.GlastonburyUSA
  2. 2.University of IllinoisUrbana-ChampaignUSA
  3. 3.U.S. Army Electronics Technology and Devices LaboratoryFort MonmouthUSA
  4. 4.Arizona State UniversityTempeUSA

Bibliographic information