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Computer-Aided Design and VLSI Device Development

  • Kit Man Cham
  • Soo-Young Oh
  • John L. Moll
  • Keunmyung Lee
  • Paul Vande Voorde
  • Daeje Chin

Table of contents

  1. Front Matter
    Pages i-xiii
  2. Overview

    1. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 1-10
  3. Numerical Simulation Systems

    1. Front Matter
      Pages 11-11
    2. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 13-21
    3. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 23-69
    4. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 71-127
    5. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 129-140
  4. Applications and Case Studies

    1. Front Matter
      Pages 141-141
    2. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 143-150
    3. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 151-165
    4. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 167-195
    5. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 197-209
    6. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 211-231
    7. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 233-250
    8. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 251-270
    9. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 271-300
    10. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 301-313
    11. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 315-334
    12. Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
      Pages 335-357
  5. Back Matter
    Pages 359-379

About this book

Introduction

examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu­ lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec­ tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol­ ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi­ gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.

Keywords

CMOS MOSFET VLSI computer development interconnect simulation transistor

Authors and affiliations

  • Kit Man Cham
    • 1
  • Soo-Young Oh
    • 1
  • John L. Moll
    • 1
  • Keunmyung Lee
    • 1
  • Paul Vande Voorde
    • 1
  • Daeje Chin
    • 2
  1. 1.Hewlett-Packard LaboratoriesUK
  2. 2.Samsung SemiconductorUK

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4613-1695-4
  • Copyright Information Springer-Verlag US 1988
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4612-8956-2
  • Online ISBN 978-1-4613-1695-4
  • Series Print ISSN 0893-3405
  • Buy this book on publisher's site