© 1988

The Physics and Technology of Amorphous SiO2

  • Roderick A. B. Devine

Table of contents

  1. Front Matter
    Pages i-xii
  2. Structure: Theory and Experiment

    1. Frank L. Galeener
      Pages 1-13
    2. U. Buchenau
      Pages 47-53
    3. Paul McMillan
      Pages 63-70
    4. Hiroshi Kobayashi, Kazuhiro Ema
      Pages 71-75
    5. R. Aujla, R. Dupree, I. Farnan, D. Holland
      Pages 77-82
    6. S. L. Chan, L. F. Gladden, S. R. Elliott
      Pages 83-89
  3. Intrinsic and Extrinsic Defects: Theory

    1. W. Beall Fowler, Jayanta K. Rudra, Arthur H. Edwards, Frank J. Feigl
      Pages 107-112
    2. Mariusz Marczewski, Ireneusz Strzalkowski, Jacek Baranowski
      Pages 119-124
  4. Intrinsic and Extrinsic Defects: Experiment

    1. David L. Griscom
      Pages 125-134
    2. Noriaki Itoh, Katsumi Tanimura, Chihiro Itoh
      Pages 135-140
    3. J. H. Stathis
      Pages 141-151
    4. H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux et al.
      Pages 153-159

About this book


The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under­ standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans­ port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.


X-ray defects glass physics radiation structure thin films transport

Editors and affiliations

  • Roderick A. B. Devine
    • 1
  1. 1.National Center for Telecommunications StudiesMeylandFrance

Bibliographic information

  • Book Title The Physics and Technology of Amorphous SiO2
  • Authors Roderick A.B. Devine
  • DOI
  • Copyright Information Springer-Verlag US 1988
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Hardcover ISBN 978-0-306-42929-3
  • Softcover ISBN 978-1-4612-8301-0
  • eBook ISBN 978-1-4613-1031-0
  • Edition Number 1
  • Number of Pages XII, 579
  • Number of Illustrations 8 b/w illustrations, 5 illustrations in colour
  • Topics Characterization and Evaluation of Materials
  • Buy this book on publisher's site