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The Physics and Technology of Amorphous SiO2

  • Roderick A. B. Devine

Table of contents

  1. Front Matter
    Pages i-xii
  2. Structure: Theory and Experiment

    1. Frank L. Galeener
      Pages 1-13
    2. U. Buchenau
      Pages 47-53
    3. Paul McMillan
      Pages 63-70
    4. Hiroshi Kobayashi, Kazuhiro Ema
      Pages 71-75
    5. R. Aujla, R. Dupree, I. Farnan, D. Holland
      Pages 77-82
    6. S. L. Chan, L. F. Gladden, S. R. Elliott
      Pages 83-89
  3. Intrinsic and Extrinsic Defects: Theory

    1. W. Beall Fowler, Jayanta K. Rudra, Arthur H. Edwards, Frank J. Feigl
      Pages 107-112
    2. Mariusz Marczewski, Ireneusz Strzalkowski, Jacek Baranowski
      Pages 119-124
  4. Intrinsic and Extrinsic Defects: Experiment

    1. David L. Griscom
      Pages 125-134
    2. Noriaki Itoh, Katsumi Tanimura, Chihiro Itoh
      Pages 135-140
    3. J. H. Stathis
      Pages 141-151
    4. H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux et al.
      Pages 153-159
    5. Kaya Nagasawa, Yoshimichi Ohki, Yoshimasa Hama
      Pages 165-170
    6. I. Godmanis, W. Hohenau
      Pages 171-174
    7. M. Guzzi, M. Martini, F. Pio, G. Spinolo, A. Vedda
      Pages 175-179
    8. M. E. Zvanut, F. J. Feigl, W. B. Fowler, J. K. Rudra
      Pages 187-192
    9. K. Nagasawa, H. Mizuno, Y. Yamasaka, R. Tohmon, Y. Ohki, Y. Hama
      Pages 193-198
    10. K. Nagasawa, Y. Yokomachi, R. Tohmon, Y. Ohki, Y. Hama
      Pages 199-203
    11. E. Dooryhee, Y. Langevin, J. Borg, J. P. Duraud, E. Balanzat
      Pages 205-210
    12. W. Hohenau, I. Godmanis
      Pages 211-214
    13. R. F. Haglund Jr., D. L. Kinser, H. Mogul, N. H. Tolk, P. W. Wang, R. A. Weeks
      Pages 215-221
    14. M. Offenberg, P. J. Grunthaner, D. D. Krut, P. Balk
      Pages 223-229
  5. Interfaces

  6. Oxidation, Oxynitrides and Deposited Films

    1. A. G. Revesz, B. J. Mrstik, H. L. Hughes
      Pages 297-306
    2. Francesca Micheli, Ian W. Boyd
      Pages 331-336
    3. Yves Cros, Jean Christophe Rostaing
      Pages 337-343
    4. N. Chan Tung, Y. Cartini, R. Pantel, J. L. Buevoz
      Pages 345-352
    5. A. G. Dias, E. Bustarret, R. C. da Silva
      Pages 353-358

About this book

Introduction

The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under­ standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans­ port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

Keywords

X-ray defects glass physics radiation structure thin films transport

Editors and affiliations

  • Roderick A. B. Devine
    • 1
  1. 1.National Center for Telecommunications StudiesMeylandFrance

Bibliographic information