Metallization and Metal-Semiconductor Interfaces

  • Inder P. Batra

Part of the NATO ASI Series book series (NSSB, volume 195)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Introduction to Metallization and Metal-Semiconductor Interfaces

  3. General Schottky Barrier Mechanisms

  4. Defects at Metal-Semiconductor Contacts

  5. Temperature Dependent Metallization Studies

    1. Front Matter
      Pages 137-137
    2. W. E. Spicer, R. Cao, K. Miyano, C. McCants, T. T. Chiang, C. J. Spindt et al.
      Pages 139-161
    3. A. Kahn, K. Stiles, D. Mao, S. F. Horng, K. Young, J. McKinley et al.
      Pages 163-178
  6. Silicon-Silicide Interfaces

  7. Band Offsets and Barriers

    1. Front Matter
      Pages 257-257
    2. M. Lannoo, C. Priester, G. Allan, I. Lefebvre, C. Delerue
      Pages 259-268
    3. C. Priester, G. Allan, M. Lannoo
      Pages 269-278
  8. Metallization Review

    1. Front Matter
      Pages 279-279
    2. G. P. Srivastava, Inder P. Batra
      Pages 289-303
  9. Applications of Tunneling to Metal-Semiconductor Interfaces

    1. Front Matter
      Pages 305-305
    2. F. Salvan, F. Thibaudau, Ph. Dumas, A. Humbert
      Pages 315-327
  10. Alkali Metals-Semiconductors Interfaces

    1. Front Matter
      Pages 333-333
    2. S. Ciraci, Inder P. Batra
      Pages 335-349
    3. M. Tsukada, N. Shima, Z. Zhu, H. Ishida, K. Terakura
      Pages 351-366
    4. Yoshitada Murata, Hiroshi Tochihara, Masakazu Kubota
      Pages 367-380
    5. Enrique G. Michel, Maria C. Asensio, Rodolfo Miranda
      Pages 381-395
    6. B. Reihl, K. O. Magnusson, J. M. Nicholls, P. Perfetti, F. Salvan
      Pages 397-423
    7. C. Laubschat, M. Prietsch, M. Domke, E. Weschke, T. Mandel, G. Remmers et al.
      Pages 425-438
    8. C. Y. Fong, L. H. Yang, Inder P. Batra
      Pages 449-463
    9. C. A. Papageorgopoulos
      Pages 489-503
  11. Back Matter
    Pages 505-510

About this book


This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as­ sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi­ conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com­ plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro­ vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.


Doping Metall Semiconductor Tunnel diode metal microscopy semiconductors spectroscopy

Editors and affiliations

  • Inder P. Batra
    • 1
  1. 1.IBM Almaden Research CenterSan JoseUSA

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag US 1989
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4612-8086-6
  • Online ISBN 978-1-4613-0795-2
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site