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Microscopy of Semiconducting Materials 2007

  • A. G. Cullis
  • P. A. Midgley

Part of the Springer Proceedings in Physics book series (SPPHY, volume 120)

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Wide Band-Gap Nitrides

    1. C J Humphreys, M J Galtrey, N van der Laak, R A Oliver, M J Kappers, J S Barnard et al.
      Pages 3-12
    2. A Andreev, E Sarigiannidou, E Monroy, B Daudin, J Rouvière
      Pages 13-16
    3. A Pretorius, K Müller, T Yamaguchi, R Kröger, D Hommel, A Rosenauer
      Pages 17-20
    4. Q Wang, T Wang, P J Parbrook, J Bai, A G Cullis
      Pages 21-24
    5. P D Cherns, C McAleese, M J Kappers, C J Humphreys
      Pages 25-28
    6. T C Sadler, M J Kappers, M E Vickers, R A Oliver
      Pages 29-32
    7. J Bai, T Wang, P J Parbrook, K B Lee, Q Wang, A G Cullis
      Pages 33-36
    8. Z Liliental-Weber, O Kryliouk, H J Park, J Mangum, T Anderson, W Schaff
      Pages 37-40
    9. A Delimitis, Ph Komninou, J Arvanitidis, M Katsikini, S-L Sahonta, E Dimakis et al.
      Pages 41-44
    10. A Mogilatenko, W Neumann, E Richter, M Weyers, B Velickov, R Uecker
      Pages 45-48
    11. B Pécz, L Tóth, L Dobos, P Bove, H Lahrèche, R Langer
      Pages 53-56
    12. L Tóth, L Dobos, B Pécz, M A di Forte Poisson, R Langer
      Pages 57-60
    13. Y Zhang, C McAleese, H Xiu, C J Humphreys, R R Lieten, S Degroote et al.
      Pages 61-64
    14. G P Dimitrakopulos, Ph Komninou, Th Kehagias, A Delimitis, J Kioseoglou, S-L Sahonta et al.
      Pages 66-68
    15. N Ketteniss, M J Kappers, C McAleese, R A Oliver
      Pages 69-72
    16. T Li, C Simbrunner, A Navarro-Quezada, M Wegscheider, M Quast, A Bonanni
      Pages 77-80
    17. W N Ng, K N Hui, X H Wang, C H Leung, P T Lai, H W Choi
      Pages 81-84
    18. J S Barnard, Y S Beyer
      Pages 85-88
  3. General Heteroepitaxial Layers

    1. David J Smith
      Pages 91-98
    2. E Luna, A Trampert, E-M Pavelescu, M Pessa
      Pages 99-102
    3. M W Fay, Y Han, S V Novikov, K W Edmonds, B L Gallagher, R P Campion et al.
      Pages 103-106
    4. I Németh, B Kunert, W Stolz, K Volz
      Pages 107-110
    5. N D Zakharov, P Werner, V I Vdovin, D V Denisov, N A Sobolev, U Gösele
      Pages 115-118
    6. Ch Dieker, J W Seo, A Guiller, M Sousa, J-P Locquet, J Fompeyrine et al.
      Pages 119-122
    7. Yu A Danilov, E S Demidov, S Yu Zubkov, V P Lesnikov, G A Maximov, D E Nikolitchev et al.
      Pages 123-126
    8. Y K Sun, D Cherns, P Heard, R P Doherty, Y Sun, M N R Ashfold
      Pages 127-130
  4. High Resolution Microscopy and Nanoanalysis

    1. K Tillmann, J Barthel, L Houben, C L Jia, M Lentzen, A Thust et al.
      Pages 133-148
    2. F Hüe, M J Hÿtch, J-M Hartmann, Y Bogumilowicz, A Claverie
      Pages 149-152
    3. D A Eustace, D W McComb, L Buckle, P Buckle, T Ashley, L J Singh et al.
      Pages 153-156
    4. Mark J Galtrey, Rachel A Oliver, Menno J Kappers, Colin J Humphreys, Debbie J Stokes, Peter H Clifton et al.
      Pages 161-164
    5. V Grillo, E Carlino, G Ciasca, M De Seta, C Ferrari
      Pages 173-176
    6. V Grillo, E Carlino, L Felisari, L Manna, L Carbone
      Pages 181-184
    7. M Schowalter, A Rosenauer, J T Titantah, D Lamoen
      Pages 195-198
    8. D Delaportas, P Aden, C Muckle, S Yeates, R Treutlein, S Haq et al.
      Pages 203-206
  5. Self-Organised and Quantum Domain Structures

    1. M I den Hertog, J L Rouviere, F Dhalluin, P Gentile, P Ferret, C Ternon et al.
      Pages 217-220
    2. L Lari, R T Murray, M Gass, T J Bullough, P R Chalker, C Chèze et al.
      Pages 221-224
    3. Th Kehagias, Ph Komninou, G P Dimitrakopulos, S-L Sahonta, C Chèze, L Geelhaar et al.
      Pages 225-228

About these proceedings

Introduction

The fifteenth international conference on Microscopy of Semiconducting Materials took place in Cambridge, UK on 2-5 April 2007. It was organised by the Institute of Physics, with co-sponsorship by the Royal Microscopical Society and endorsement by the Materials Research Society. The conference focused upon the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy, scanning probe microscopy and X-ray-based methods.
Conference sessions concentrated on key topics including state-of-the-art studies in high resolution imaging and analytical electron microscopy, advanced scanning probe microscopy, scanning electron microscopy and focused ion beam applications, novel epitaxial layer phenomena, the properties of quantum nanostructures, III-nitride developments, GeSi/Si for advanced devices, metal-semiconductor contacts and silicides and the important effects of critical device processing treatments. Accordingly, this volume should be of direct interest to researchers in areas ranging from fundamental studies to electronic device assessment.

Keywords

Canopus Semiconductor Transmission electron microscopy crystals and superlattices electron microscopy integrated circuit microcharacterization techniques nanoscience and nanostructures quantum dot semiconductor materials semiconductor processing treatments thin film

Editors and affiliations

  • A. G. Cullis
    • 1
  • P. A. Midgley
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  2. 2.Department of Materials Science and MetallurgyUniversity of CambridgeCambridgeUK

Bibliographic information