Narrow Gap Semiconductors 2007

Proceedings of the 13th International Conference, 8–12 July, 2007, Guildford, UK

  • Ben Murdin
  • Steve Clowes
Conference proceedings

DOI: 10.1007/978-1-4020-8425-6

Part of the Springer Proceedings in Physics book series (SPPHY, volume 119)

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Spin-Related Phenomena

    1. W. R. Branford, A. M. Gilbertson, P. D. Buckle, L. Buckle, T. Ashley, F. Magnus et al.
      Pages 3-5
    2. B. Wittmann, S. N. Danilov, Z. D. Kwon, N. N. Mikhailov, S. A. Dvoretsky, R. Ravash et al.
      Pages 7-9
    3. P. Dziawa, W. Knoff, V. Domukhovski, J. Domagala, R. Jakiela, E. Lusakowska et al.
      Pages 11-14
    4. Giti A. Khodaparast, R. N. Kini, K. Nontapot, M. Frazier, E. C. Wade, J. J. Heremans et al.
      Pages 15-18
    5. K. L. Litvinenko, B. N. Murdin, S. K. Clowes, L. Nikzad, J. Allam, C. R. Pidgeon et al.
      Pages 19-21
    6. C. R. Pidgeon, K. L. Litvinenko, L. Nikzad, J. Allam, L. F. Cohen, T. Ashley et al.
      Pages 27-29
    7. Ya. V. Terent’ev, O. G. Lyublinskaya, A. A. Toropov, B. Ya. Meltser, A. N. Semenov, S. V. Ivanov
      Pages 31-33
    8. A. R. Dedigama, D. Jayathilaka, S. H. Gunawardana, S. Q. Murphy, M. Edirisooriya, N. Goel et al.
      Pages 35-38
  3. Growth, Fabrication, Characterisation and Theory

    1. R. Adomavičius, R. Šustavičiūtė, A. Krotkus
      Pages 41-43
    2. A. Lindsay, A. D. Andreev, E. P. O’Reilly, T. Ashley
      Pages 45-47
    3. S. D. Coomber, L. Buckle, P. H. Jefferson, D. Walker, T. D. Veal, C. F. McConville et al.
      Pages 49-51
    4. A. D. Rodrigues, J. C. Galzerani, E. Marega Jr., L. N. Coelho, R. Magalhães-Paniago, G. J. Salamo
      Pages 57-60
    5. M. Goiran, M. P. Semtsiv, S. Dressler, W. T. Masselink, J. Galibert, G. Fedorov et al.
      Pages 61-63
    6. M. Yin, A. Krier, R. Jones
      Pages 65-68
    7. M. Yin, A. Krier, P. J. Carrington, R. Jones, S. E. Krier
      Pages 69-72
    8. V. Osinniy, P. Dziawa, V. Domukhovski, K. Dybko, W. Knoff, T. Radzynski et al.
      Pages 73-75
    9. V. Palankovski, M. Wagner, W. Heiss
      Pages 77-79

About these proceedings

Introduction

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics.

The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.

Keywords

Doping Exciton Magnetic field Raman spectroscopy Semiconductor crystal electronics liquid modeling optics quantum dot spectroscopy thin film

Editors and affiliations

  • Ben Murdin
    • 1
  • Steve Clowes
    • 1
  1. 1.Faculty of Engineering and Physical SciencesUniversity of SurreyGuildfordUK

Bibliographic information

  • Copyright Information Springer Netherlands 2008
  • Publisher Name Springer, Dordrecht
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-1-4020-8424-9
  • Online ISBN 978-1-4020-8425-6
  • Series Print ISSN 0930-8989