Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

  • Yosi Shacham-Diamand
  • Tetsuya  Osaka
  • Madhav Datta
  • Takayuki  Ohba

Table of contents

  1. Front Matter
    Pages i-xx
  2. Introduction

    1. Front Matter
      Pages 1-1
  3. Technology Background

    1. Front Matter
      Pages 13-13
    2. Marc Van Rossum
      Pages 15-38
    3. Madhav Datta
      Pages 63-71
    4. David Brandon
      Pages 73-78
    5. Ronald J. Gutmann, Jian-Qiang Lu
      Pages 79-90
  4. Interconnect Materials

    1. Front Matter
      Pages 91-92
    2. Osamu Nakatsuka, Shigeaki Zaima
      Pages 121-130
    3. S. Tsukimoto, K. Ito, M. Murakami
      Pages 131-143
    4. Akira Hashimoto, Ichiro Koiwa
      Pages 145-151
    5. Hyun Park, Matthias Kraatz, Jay Im, Bernd Kastenmeier, Paul S. Ho
      Pages 153-167
  5. Deposition Processes for ULSI Interconnects

    1. Front Matter
      Pages 181-182
    2. Tetsuya Osaka, Madoka Hasegawa, Masahiro Yoshino, Noriyuki Yamachika
      Pages 183-205

About this book


Advanced Nanoscale ULSI Interconnects: Fundamental and Applications brings a comprehensive description of copper based interconnect technology for Ultra Large Scale Integration (ULSI) technology to Integrated Circuit (ICs) application. This book reviews the basic technologies used today for the copper metallization of ULSI applications: deposition and planarization. It describes the materials used, their properties, and the way they are all integrated, specifically in regard to the copper integration processes and electrochemical processes in the nanoscale regime. The book also presents various novel nanoscale technologies that will link modern nanoscale electronics to future nanoscale based systems. This diverse, multidisciplinary volume will appeal to process engineers in the microelectronics industry; universities with programs in ULSI design, microelectronics, MEMS and nanoelectronics; and professionals in the electrochemical industry working with materials, plating and tool vendors.


CMOS Wafer chemistry development electrochemistry integrated circuit interconnect manufacturing modeling nanotechnology scaling vapor

Editors and affiliations

  • Yosi Shacham-Diamand
    • 1
  • Tetsuya  Osaka
    • 2
  • Madhav Datta
    • 3
  • Takayuki  Ohba
    • 4
  1. 1.Tel Aviv UniversityRamat Aviv, Tel AvivIsrael
  2. 2.Dept. Applied ChemistryWaseda UniversityTokyoJapan
  3. 3.Emerson Network PowerCooligy Precision CoolingMountain ViewU.S.A.
  4. 4.Division of Corporate RelationsThe University of TokyoTokyo Japan

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag New York 2009
  • Publisher Name Springer, New York, NY
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-0-387-95867-5
  • Online ISBN 978-0-387-95868-2
  • About this book