Fundamentals of Power Semiconductor Devices

  • B. Jayant Baliga

Table of contents

  1. Front Matter
    Pages i-xxiii
  2. B. Jayant Baliga
    Pages 1-22
  3. B. Jayant Baliga
    Pages 23-89
  4. B. Jayant Baliga
    Pages 90-165
  5. B. Jayant Baliga
    Pages 166-200
  6. B. Jayant Baliga
    Pages 201-275
  7. B. Jayant Baliga
    Pages 276-503
  8. B. Jayant Baliga
    Pages 504-620
  9. B. Jayant Baliga
    Pages 621-732
  10. B. Jayant Baliga
    Pages 733-1021
  11. B. Jayant Baliga
    Pages 1022-1042
  12. Back Matter
    Pages 1049-1069

About this book


Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:

  • Numerical simulation examples to elucidate the operating physics and validate the models
  • Device performance attributes that allow practicing engineers in the industry to develop products
  • Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field
  • Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures.


Leistungsfeldeffekttransistor Schottky rectifiers Thyristor Transistor bipolar junction transistor field-effect transistor metal oxide semiconductur field-effect transistor power electronics semiconductor devices silicon devices transport physics

Authors and affiliations

  • B. Jayant Baliga
    • 1
  1. 1.Power Semiconductor Research CenterNorth Carolina State UniversityRaleighU.S.A.

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag US 2008
  • Publisher Name Springer, Boston, MA
  • eBook Packages Engineering
  • Print ISBN 978-0-387-47313-0
  • Online ISBN 978-0-387-47314-7
  • Buy this book on publisher's site