Defects in High-k Gate Dielectric Stacks

Nano-Electronic Semiconductor Devices

  • Evgeni Gusev
Part of the NATO Science Series II: Mathematics, Physics and Chemistry book series (NAII, volume 220)

Table of contents

  1. Front Matter
    Pages I-XI
  2. MASAAKI NIWA, RIICHIROU MITSUHASHI, KAZUHIKO YAMAMOTO, SHIGENORI HAYASHI, AUDE ROTHCHILD, STEFAN KUBICEK et al.
    Pages 1-15
  3. JOHAN KLOOTWIJK, ANTON KEMMEREN, ROB WOLTERS, FRED ROOZEBOOM, JAN VERHOEVEN, ERIC VAN DEN HEUVEL
    Pages 17-28
  4. JEROME MITARD, CHARLES LEROUX, GILLES REIMBOLD, XAVIER GARROS, FRANÇOIS MARTIN, GERARD GHIBAUDO
    Pages 73-84
  5. LUIGI PANTISANO, L-Å. RAGNARSSON, M. HOUSSA, R. DEGRAEVE, G. GROESENEKEN, T. SCHRAM et al.
    Pages 97-108
  6. PAUL C. MCINTYRE, HYOUNGSUB KIM, KRISHNA C. SARASWAT
    Pages 109-121
  7. KAUPO KUKLI, SALVADOR DUEÑAS, HELENA CASTÁN, HECTOR GARCÍA, JUAN BARBOLLA, JAAN AARIK et al.
    Pages 123-134
  8. P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE, M.J. KIM, B.E. GNADE, R.M. WALLACE
    Pages 135-146
  9. ANDREI ZENKEVICH, YURI LEBEDINSKII, GIOVANNA SCAREL, MARCO FANCIULLI
    Pages 147-160
  10. BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS, S.A. KRISHAN, CHADWIN D. YOUNG, JOHNNY SIM et al.
    Pages 161-173
  11. J. ROBERTSON, K. XIONG, S.J. CLARK, S.J. CLARK
    Pages 175-187
  12. SOKRATES T. PANTELIDES, M.H. EVANS, D.M. FLEETWOOD, E. P. GUSEV, J. D. JOANNOPOULOS, Z. LU et al.
    Pages 189-202
  13. G. BERSUKER, B. H. LEE, H.R. HUFF, J. GAVARTIN, A. SHLUGER
    Pages 227-236

About these proceedings

Introduction

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Keywords

Diffusion Germanium IC MOSFET RAM SSI applied physics electrical engineering integrated circuit modeling semiconductor spectroscopy

Editors and affiliations

  • Evgeni Gusev
    • 1
  1. 1.IBM T.J.Watson Research CenterNew YorkU.S.A.

Bibliographic information

  • DOI https://doi.org/10.1007/1-4020-4367-8
  • Copyright Information Springer 2006
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-1-4020-4365-9
  • Online ISBN 978-1-4020-4367-3
  • Series Print ISSN 1568-2609
  • About this book