Advanced Experimental Methods For Noise Research in Nanoscale Electronic Devices

  • Josef Sikula
  • Michael Levinshtein
Part of the NATO Science Series II: Mathematics, Physics and Chemistry book series (NAII, volume 151)

Table of contents

  1. Front Matter
    Pages I-IX
  2. Noise Sources

    1. F.N. Hooge
      Pages 3-10
    2. M. Planat, H. Rosu
      Pages 37-44
    3. M. Macucci, P. Marconcini, G. Iannaccone, M. Gattobigio, G. Basso, B. Pellegrini
      Pages 45-52
    4. Ya. M. Blanter
      Pages 53-60
  3. Noise in Nanoscale Devices

    1. R. Alabedra
      Pages 71-78
    2. L.K.J. Vandamme
      Pages 109-120
    3. N. Lukyanchikova, E. Simoen, A. Mercha, C. Claeys
      Pages 129-136
    4. S. Ferraton, L. Montès, I. Ionica, J. Zimmermann, J. A. Chroboczek
      Pages 137-144
    5. L. Reggiani, V. Ya Aleshkin, A. Reklaitis
      Pages 145-152
    6. M. Levinshtein, S. Rumyantsev, M. S. Shur
      Pages 161-168

About these proceedings

Introduction

A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects.

The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.

Keywords

Experiment Hochfrequenz MOSFET Phase Signal Telegraph Wafer laser measurement metrology modeling network quantum dot semiconductor devices transistor

Editors and affiliations

  • Josef Sikula
    • 1
  • Michael Levinshtein
    • 2
  1. 1.Brno University of TechnologyBrnoCzech Republic
  2. 2.Ioffe Institute of Russian Academy of SciencesSt. PetersburgRussia

Bibliographic information

  • DOI https://doi.org/10.1007/1-4020-2170-4
  • Copyright Information Springer Science + Business Media, Inc. 2005
  • Publisher Name Springer, Dordrecht
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-1-4020-2169-5
  • Online ISBN 978-1-4020-2170-1
  • Series Print ISSN 1568-2609