We investigated defect generation in GaAs and InP on various blanket Si substrates and Si patterns with nanosized trench structures via transmission electron microscopy. The dependences of types of defects on the substrate orientation and the pattern size in GaAs and InP on nanosized patterns were analyzed. Defects that formed in a specific direction, and shapes similar to those stacking faults or twin boundaries (TWs) were confirmed. Moreover, we observed that unusual directional defects could not be effectively trapped by using aspect ratio trapping techniques owing to their various angles. The multi-twin (M-TW) angles generated from the original TW were calculated and projected in a pole figure by using the stereographic projection technique. Moreover, M-TW defects were illustrated via 3D computer graphics simulations.
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P. Paufler, Z. Kristallogr. 190, 155 (1990).
E. Orowan, Proc. Phys. Soc. 52, 8 (1940).
R. W. Cahn, Adv. Phys. 3, 363 (1954).
J. E. Aycrs, J. Cryst. Growth 135, 71 (1994).
J. R. Patel and A. R. Chaudhuri, J. Appl. Phys. 34, 2788 (1963).
B. Qu et al., J. Cryst. Growth 226, 57 (2001).
S. M. Hu, J. Vac. Sci. Technol. 14, 17 (1976).
M. Chu, Y. Sun, U. Aghoram and S. E. Thompson, Annu. Rev. Mater. Res. 39, 203 (2009).
R. Chau, S. Datta and A. Majumdar, in IEEE Compound Semiconductor Integrated Circuit Symposium, 2005 (Palm Springs, CA, USA, Oct. 30–Nov. 2, 2005).
T. Ashley et al., in Proceeding of Int. Conf. Solid-State Integr. Circuits Technol. Proceedings, ICSICT, 3 (Beijing, China, Oct. 18–21, 2004).
R. Chau et al., IEEE Trans. Nanotechnol. 4, 153 (2005).
S. Datta et al., in Proceedings of IEEE International Electron Devices Meeting (Washington, DC, USA, Dec. 5 to 7, 2005).
M. Yamaguchi et al., Appl. Phys. Lett. 53, 2293 (1988).
Z. I. Kazi et al., Jpn. J. Appl. Phys. 40, 4093 (2001).
M. E. Groenert et al., J. Appl. Phys. 93, 362 (2003).
N. Hayafuji et al., Jpn. J. Appl. Phys. 29, 2371 (1990).
R. N. Ghosh, B. Griffing and J. M. Ballantyne, Appl. Phys. Lett. 48, 370 (1986).
J. S. Park et al., Appl. Phys. Lett. 90, 052113 (2007).
J. Z. Li et al., Appl. Phys. Lett. 91, 021114 (2007).
J. Z. Li et al., ECS Trans. 18, 887 (2009).
S. W. Kim et al., J. Cryst. Growth 401, 319 (2014).
Y. D. Cho et al., ECS J. Solid State Sci. Technol. 5, P409 (2016).
A. W. Bett, F. Dimroth, G. Stollwerck and O. V. Sulima, Appl. Phys. A 69, 119 (1999).
C. Sun, E. Müller, M. Meffert and D. Gerthsen, Adv. Struct. Chem. Imaging 5, 1 (2019).
H. Hofmeister, Encycl. Nanosci. Nanotechnol. 3, 22 (2003).
C. Palache, J. Chem. Inf. Model. 53, 1689 (2013).
This study was financially supported by the IT R&D program of Ministry of Knowledge Economy/Korea Evaluation Institute of Industrial Technology (10067739, Development of Core Technologies for <5-nm Next-Generation Logic Devices).
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Lee, J., Shin, H., Lee, IG. et al. Study of Multi-twin Defects Generated in GaAs and InP Films on Nanopatterned Si via Transmission Electron Microscopy. J. Korean Phys. Soc. 77, 592–597 (2020). https://doi.org/10.3938/jkps.77.592
- Stacking fault