Abstract
Light emission charactersitcs of single and coupled wurtzite (WZ) InGaN/GaN quantum-dot (QD) structures were investigated by using an effective mass theory. Strain components in the well of the coupled QD are found to be smaller than those in the well of the single QD structure. In particular, the reduction effect in ϵzz is dominant and, as a result, the polarization component Izz for the strain tensor ϵzz is largely reduced for the coupled QD. The coupled QD structure shows much larger peak intensity than the single QD structure because the interband transition probability between electrons and holes is enhanced owing to the reduced internal field.
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Acknowledgments
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2018R1D1A1B07042028).
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Park, SH., Ahn, D. Effect of Coupled Quantum-Dot Insertion on the Radiative Recombination Probability of Wurtzite InGaN/GaN Quantum Dots. J. Korean Phys. Soc. 76, 55–58 (2020). https://doi.org/10.3938/jkps.76.55
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DOI: https://doi.org/10.3938/jkps.76.55