Abstract
The prediction of the current-voltage (IV) characteristics of resistive switching devices has remained a challenge before their physical realization. This research work addresses the prediction of the IV characteristics and the bipolar switching mechanism of polymer-based resistive switches by examining their structures before their fabrication. The research was carried out through an analytical study of the device structure, thereby correlating the predicted IV curve to the in-situ IV characteristics of the device. Different types of the device structures were considered, depending upon the work function of the top and the bottom electrodes and the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) levels of the sandwiched layer. We concluded that the defects/traps within the sandwiched layer lead to the interface effect being the dominant switching mechanism driving the polymer-based resistive switches. Furthermore, we also found that the devices following the interface effect are driven from trap-limited space-charge-limited current (SCLC) conduction to trap-free SCLC conduction as their current conduction mechanisms.
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This work was supported by the Department of Electrical and Computer Engineering, COMSATS University Islamabad, Lahore Campus, Pakistan.
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Awais, M.N., Shehzad, M.N. Prediction of the Current-Voltage Characteristics and the Bipolar Resistive Switching Mechanism in Polymer-Based Sandwiched Structures. J. Korean Phys. Soc. 75, 409–414 (2019). https://doi.org/10.3938/jkps.75.409
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DOI: https://doi.org/10.3938/jkps.75.409