Journal of the Korean Physical Society

, Volume 73, Issue 11, pp 1604–1611 | Cite as

SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

  • Laiq Hussain
  • Håkan PetterssonEmail author
  • Qin Wang
  • Amir Karim
  • Jan Anderson
  • Mehrdad Jafari
  • Jindong Song
  • Won Jun Choi
  • Il Ki Han
  • Ju Young Lim
Open Access


Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of GaAsxSb1−x, In1−xGaxSb, and InAsxSb1−x with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from 2 μm to 12 μm in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from InAsxSb1−x and In1−xGaxSb samples even at room temperature show promising potential for IR photodetector applications.


SWIR MWIR LWIR Sb-based thin films IR detector 


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Authors and Affiliations

  • Laiq Hussain
    • 1
    • 2
  • Håkan Pettersson
    • 1
    • 2
    Email author
  • Qin Wang
    • 3
  • Amir Karim
    • 3
  • Jan Anderson
    • 3
  • Mehrdad Jafari
    • 4
  • Jindong Song
    • 5
  • Won Jun Choi
    • 5
  • Il Ki Han
    • 5
  • Ju Young Lim
    • 5
  1. 1.Department of Mathematics, Physics and Electrical EngineeringHalmstad UniversityHalmstadSweden
  2. 2.NanoLund and Solid State PhysicsLund UniversityLundSweden
  3. 3.Acreo Swedish ICT ABKistaSweden
  4. 4.Department of Mathematics, Physics and Electrical EngineeringHalmstad UniversityHalmstadSweden
  5. 5.Center for Opto-Electronic Convergence SystemsKorea Institute of Science and TechnologySeoulKorea

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