Abstract
The built-in voltage (V bi ) of a Au/n-GaAs Schottky barrier diode was examined by using electroreflectance (ER) spectroscopy. The ER spectra were measured at various modulation voltages (v ac ) and dc bias voltages (V bias ). The interface electric fields (E i ) were obtained from the observed Franz-Keldysh oscillations (FKO) in the ER spectra. When v ac was increased, the amplitudes of the ER spectra varied linearly, but the line shapes of the ER spectra did not change. E i decreased from 19.3 × 104 V/cm to 4.39 × 104 V/cm with increasing V bias from −0.5 V to 0.6 V. From the relationship between V bias and E 2i , the V bi and the carrier concentration (n) were found to be 0.70 V and 2.4 × 1016 cm −3, respectively.
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Kim, DL., Kim, GH. & Kim, J.S. Evaluation of the Built-in Voltage of a Au/n-GaAs Schottky Barrier Diode by Using Electroreflectance Spectroscopy. Journal of the Korean Physical Society 72, 406–411 (2018). https://doi.org/10.3938/jkps.72.406
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DOI: https://doi.org/10.3938/jkps.72.406